Relation between photocurrent and DLTS signals observed for quantum dot systems
Relation between photocurrent and DLTS signals observed for quantum dot systems
The electro-optical properties of InAs/GaAs quantum dots (QD) are presented. It is shown that they can contribute to the photocurrent at temperatures where photo-generated excitons can split. This happens if the carrier binding energies are not too large to prevent the carrier emission process. At lower temperatures, the exciton recombination process can effectively compete with the carrier emission processes and no photocurrent signal is observed. The Laplace DLTS technique has been used in a wide temperature range to analyze the electron and hole emission separately and combine them with the observed temperature dependence of the photocurrent. The photocurrent measurements also showed that with an increase in temperature the dot-related photocurrent peaks shift to lower energies with a rate similar to GaAs band gap shrinkage.
5170-5172
Kruszewski, P.
9f2a2b76-1463-4fc3-bd93-ade778ba2d9e
Dobaczewski, L.
915df3da-9f4b-43c4-b421-b06788c3d8cf
Mesli, A.
cbfcd3a5-237d-4783-aef3-957e45d40a53
Markevich, V. P.
2ac6fb99-876c-40aa-afb3-b8a9f1de8898
Mitchell, C.
0e48c936-a405-434d-818a-d83e382aa826
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Peaker, A. R.
6752c21c-f359-4df6-99df-ee2eca350ed3
15 December 2009
Kruszewski, P.
9f2a2b76-1463-4fc3-bd93-ade778ba2d9e
Dobaczewski, L.
915df3da-9f4b-43c4-b421-b06788c3d8cf
Mesli, A.
cbfcd3a5-237d-4783-aef3-957e45d40a53
Markevich, V. P.
2ac6fb99-876c-40aa-afb3-b8a9f1de8898
Mitchell, C.
0e48c936-a405-434d-818a-d83e382aa826
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Peaker, A. R.
6752c21c-f359-4df6-99df-ee2eca350ed3
Kruszewski, P., Dobaczewski, L., Mesli, A., Markevich, V. P., Mitchell, C., Missous, M. and Peaker, A. R.
(2009)
Relation between photocurrent and DLTS signals observed for quantum dot systems.
Physica B: Condensed Matter, 404 (23-24), .
(doi:10.1016/j.physb.2009.08.275).
Abstract
The electro-optical properties of InAs/GaAs quantum dots (QD) are presented. It is shown that they can contribute to the photocurrent at temperatures where photo-generated excitons can split. This happens if the carrier binding energies are not too large to prevent the carrier emission process. At lower temperatures, the exciton recombination process can effectively compete with the carrier emission processes and no photocurrent signal is observed. The Laplace DLTS technique has been used in a wide temperature range to analyze the electron and hole emission separately and combine them with the observed temperature dependence of the photocurrent. The photocurrent measurements also showed that with an increase in temperature the dot-related photocurrent peaks shift to lower energies with a rate similar to GaAs band gap shrinkage.
This record has no associated files available for download.
More information
Published date: 15 December 2009
Identifiers
Local EPrints ID: 493973
URI: http://eprints.soton.ac.uk/id/eprint/493973
ISSN: 0921-4526
PURE UUID: 1b85e181-bc35-4939-98e9-bf30d0783255
Catalogue record
Date deposited: 17 Sep 2024 17:17
Last modified: 18 Sep 2024 01:46
Export record
Altmetrics
Contributors
Author:
P. Kruszewski
Author:
L. Dobaczewski
Author:
A. Mesli
Author:
V. P. Markevich
Author:
C. Mitchell
Author:
M. Missous
Author:
A. R. Peaker
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics