Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures
Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures
The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 °C) and normal (∼450 °C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the formation of QDs at normal growth temperatures, but with dot sizes that were much smaller than those for "normal" growth of 3 ML InAs-GaAs QD structures. In addition, at low temperature under such "arsenic-free" conditions a very high quality InAs-GaAs superlattice structure with 3 ML of InAs was formed, as demonstrated by transmission electron microscopy (TEM). This is a direct confirmation that the critical thickness of InAs can be extended well beyond the 1.7 ML limit seen at higher growth temperatures.
Low-temperature growth, Molecular beam epitaxy, Quantum dots, Surfactant growth
476-478
Alduraibi, M.
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Mitchell, C.
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Chakraborty, S.
f0a805bd-745b-48ab-b7cd-b054ab0a67d3
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
22 July 2008
Alduraibi, M.
e5d1874e-fcf5-4556-b9c8-1fb0cc6e5b1f
Mitchell, C.
0e48c936-a405-434d-818a-d83e382aa826
Chakraborty, S.
f0a805bd-745b-48ab-b7cd-b054ab0a67d3
Missous, M.
98ca61fb-84c6-4ec9-9a91-3bfc2cd8dd78
Alduraibi, M., Mitchell, C., Chakraborty, S. and Missous, M.
(2008)
Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures.
Microelectronics Journal, 40 (3), .
(doi:10.1016/j.mejo.2008.06.055).
Abstract
The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 °C) and normal (∼450 °C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium beam impinged upon the growth surface (surfactant growth mode). This growth mode still resulted in the formation of QDs at normal growth temperatures, but with dot sizes that were much smaller than those for "normal" growth of 3 ML InAs-GaAs QD structures. In addition, at low temperature under such "arsenic-free" conditions a very high quality InAs-GaAs superlattice structure with 3 ML of InAs was formed, as demonstrated by transmission electron microscopy (TEM). This is a direct confirmation that the critical thickness of InAs can be extended well beyond the 1.7 ML limit seen at higher growth temperatures.
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Published date: 22 July 2008
Keywords:
Low-temperature growth, Molecular beam epitaxy, Quantum dots, Surfactant growth
Identifiers
Local EPrints ID: 493976
URI: http://eprints.soton.ac.uk/id/eprint/493976
ISSN: 0026-2692
PURE UUID: 4a5fd4c3-2765-4b7a-8bd2-5c7a09b17a71
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Date deposited: 17 Sep 2024 17:17
Last modified: 18 Sep 2024 01:46
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Author:
M. Alduraibi
Author:
C. Mitchell
Author:
S. Chakraborty
Author:
M. Missous
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