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Hexagonal boron nitride based photonic quantum technologies

Hexagonal boron nitride based photonic quantum technologies
Hexagonal boron nitride based photonic quantum technologies

Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.

chemical vapour deposition, density functional theory, electron paramagnetic resonance, hexagonal boron nitride, molecular beam epitaxy, optically detected magnetic resonance, quantum photonics, single-photon emitters, spin qubits, van der Waals epitaxy
Prasad, Madhava Krishna
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Taverne, Mike P.C.
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Huang, Chung-Che
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Mar, Jonathan D.
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Ho, Ying-Lung Daniel
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Prasad, Madhava Krishna
0b93549f-5176-4f57-a025-5d7be7dd497c
Taverne, Mike P.C.
cb58fa27-9967-464e-bcb3-db1bd804f591
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Mar, Jonathan D.
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Ho, Ying-Lung Daniel
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Prasad, Madhava Krishna, Taverne, Mike P.C., Huang, Chung-Che, Mar, Jonathan D. and Ho, Ying-Lung Daniel (2024) Hexagonal boron nitride based photonic quantum technologies. Materials, 17 (16), [4122]. (doi:10.3390/ma17164122).

Record type: Review

Abstract

Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.

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Accepted/In Press date: 13 August 2024
Published date: 20 August 2024
Keywords: chemical vapour deposition, density functional theory, electron paramagnetic resonance, hexagonal boron nitride, molecular beam epitaxy, optically detected magnetic resonance, quantum photonics, single-photon emitters, spin qubits, van der Waals epitaxy

Identifiers

Local EPrints ID: 494061
URI: http://eprints.soton.ac.uk/id/eprint/494061
PURE UUID: a32e82ea-c2c5-4e7a-a146-ee97c537840b
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463

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Date deposited: 20 Sep 2024 17:04
Last modified: 21 Sep 2024 01:41

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Contributors

Author: Madhava Krishna Prasad
Author: Mike P.C. Taverne
Author: Chung-Che Huang ORCID iD
Author: Jonathan D. Mar
Author: Ying-Lung Daniel Ho

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