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Chalcogenide thin film battery electrodes by chemical vapour deposition

Chalcogenide thin film battery electrodes by chemical vapour deposition
Chalcogenide thin film battery electrodes by chemical vapour deposition
In this project, chemical vapour deposition was used to synthesise thin film electrode materials as high-capacity anodes for experimental investigation in secondary batteries. The underlying mechanism was explored using ex situ experimental characterisation, including X-ray diffraction, extended X-ray absorption fine structure and X-ray absorption near edge structure. All alloying materials in this study were layered structures and the crystalline structure is orthorhombic. SnSe, stoichiometric SnS and sulfur-deficient SnS thin films were obtained by aerosol assisted CVD on metal foil with good substrate coverage. The best deposition condition for SnS-SIBs cell was 440 ℃, at a nitrogen flow of 0.1 L min-1 . The SnS0.89 sample consists of rods with a diameter of about 100 nm with some Sn contamination due to vapour-liquid-solid growth. The rod-like structure provides higher capacity and better cycling stability than other SnS-only materials in sodium half-cells, due to increasing reaction surface area and better electronic conductivity. This improved performance can be directly attributed to the SnS film itself, while other high-capacity SnS materials reported previously are composites with carbon supports. Sb2Se3 thin films were coated by aerosol-assisted chemical vapour deposition (AACVD) directly on stainless steel foil. The sample for Sb2Se3-SIB cells was deposited at 470 ℃, and a short deposition time of 0.5 h. The Sb2Se3 samples consisted of needles with a length of about 10 μm, and the thin film electrodes in sodium half-cells showed good battery capacity compared with other larger crystallite size (50 μm) Sb2Se3 materials, all of which are known to be composites with carbon supports. In situ X-ray absorption near edge structure (XANES) and ex situ X-ray diffraction (XRD) were used to study both Sb and Se changes in redox reactions. GeSe materials, like Sb materials, have better electrochemical performance with smaller particles. The XANES results of GeSe and Sb2Se3 both show first-cycle intercalation reactions and the structure and bond length around both Ge and Se also have significant changes.
University of Southampton
Zhu, Zening
2ecfee70-8408-4858-bb8c-c67aa8381c3e
Zhu, Zening
2ecfee70-8408-4858-bb8c-c67aa8381c3e
Hector, Andrew
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Hyett, Geoffrey
4f292fc9-2198-4b18-99b9-3c74e7dfed8d
Reid, Gill
37d35b11-40ce-48c5-a68e-f6ce04cd4037

Zhu, Zening (2024) Chalcogenide thin film battery electrodes by chemical vapour deposition. University of Southampton, Doctoral Thesis, 196pp.

Record type: Thesis (Doctoral)

Abstract

In this project, chemical vapour deposition was used to synthesise thin film electrode materials as high-capacity anodes for experimental investigation in secondary batteries. The underlying mechanism was explored using ex situ experimental characterisation, including X-ray diffraction, extended X-ray absorption fine structure and X-ray absorption near edge structure. All alloying materials in this study were layered structures and the crystalline structure is orthorhombic. SnSe, stoichiometric SnS and sulfur-deficient SnS thin films were obtained by aerosol assisted CVD on metal foil with good substrate coverage. The best deposition condition for SnS-SIBs cell was 440 ℃, at a nitrogen flow of 0.1 L min-1 . The SnS0.89 sample consists of rods with a diameter of about 100 nm with some Sn contamination due to vapour-liquid-solid growth. The rod-like structure provides higher capacity and better cycling stability than other SnS-only materials in sodium half-cells, due to increasing reaction surface area and better electronic conductivity. This improved performance can be directly attributed to the SnS film itself, while other high-capacity SnS materials reported previously are composites with carbon supports. Sb2Se3 thin films were coated by aerosol-assisted chemical vapour deposition (AACVD) directly on stainless steel foil. The sample for Sb2Se3-SIB cells was deposited at 470 ℃, and a short deposition time of 0.5 h. The Sb2Se3 samples consisted of needles with a length of about 10 μm, and the thin film electrodes in sodium half-cells showed good battery capacity compared with other larger crystallite size (50 μm) Sb2Se3 materials, all of which are known to be composites with carbon supports. In situ X-ray absorption near edge structure (XANES) and ex situ X-ray diffraction (XRD) were used to study both Sb and Se changes in redox reactions. GeSe materials, like Sb materials, have better electrochemical performance with smaller particles. The XANES results of GeSe and Sb2Se3 both show first-cycle intercalation reactions and the structure and bond length around both Ge and Se also have significant changes.

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More information

Published date: 2024

Identifiers

Local EPrints ID: 494736
URI: http://eprints.soton.ac.uk/id/eprint/494736
PURE UUID: c50819ab-437e-4d52-8a8a-950e5eb86eca
ORCID for Andrew Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Geoffrey Hyett: ORCID iD orcid.org/0000-0001-9302-9723
ORCID for Gill Reid: ORCID iD orcid.org/0000-0001-5349-3468

Catalogue record

Date deposited: 15 Oct 2024 16:32
Last modified: 17 Oct 2024 01:44

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Contributors

Author: Zening Zhu
Thesis advisor: Andrew Hector ORCID iD
Thesis advisor: Geoffrey Hyett ORCID iD
Thesis advisor: Gill Reid ORCID iD

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