READ ME File For 'Dataset supporting the publication:  'Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process''

Dataset DOI: 10.5258/SOTON/D2156

Date that the file was created: March, 2022

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GENERAL INFORMATION
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ReadMe Author: Ioannis Zeimpekis, University of Southampton 

Related projects:
ational Hub in High Value Photonic Manufacturing
Payne, D., Poletti, F., Mashanovich, G., Sahu, J., Zervas, M., Brambilla, G., Richardson, D., Zheludev, N., Hewak, D., Charlton, M. & Reed, G.
EPSRC
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SHARING/ACCESS INFORMATION
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Licenses/restrictions placed on the data, or limitations of reuse: CC-BY

This dataset supports the publication:
AUTHORS:Nikolaos Aspiotis, Katrina Morgan, Benjamin März, Knut Müller-Caspary, Martin Ebert, Chung-Che Huang, Daniel W. Hewak, Sayani Majumdar, Ioannis Zeimpekis
TITLE:arge-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process
JOURNAL:NPJ 2D Materials and Applications
PAPER DOI IF KNOWN:https://doi.org/10.1038/s41699-023-00379-z

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DATA & FILE OVERVIEW
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This dataset contains:

Figure 1a --> Ellipsometry fitting of MoO3 film thickness for 6 inch wafer.
Figure 1b --> Real and imaginary part of the refractive index of MoO3
Figure 1c --> Real and imaginary part of the refractive index of MoS2
Figure 2 a and b - MoO3 --> XPS analysis of MoO3 film a) Mo 3d, b) O 1s
Figure 2 c and d - MoS2 --> XPS analysis of MoS2 c) Mo 3d and d) S 2p core levels
Figure 3a BP2_PP_Sap_191007_Topography_Forward_019 copy --> 3D AFM mapping of the MoS2 film on sapphire
Figure 3b --> AFM thickness profile of MoS2
Figure 5a -->  a) Peak difference between E2g and A1g for MoS2/SiO2/Si with ALD cycles from 15 down to 8. 
Figure 5b --> b) Full Width Half Maximum of E2g peaks for MoS2/SiO2/Si samples with ALD cycles from 15 down to 8.
Figure 7 --> a) Transfer and b) output characteristics of a typical FET with channel length of 5 µm and width of 20 µm.  c)Contact resistance calculated from the On-state resistance of the FETs with different channel lengths. Histograms showing distribution of device d) On/Off ratio, e) field-effect mobility and f) subthreshold slopes (SS) of several measured devices over a 5 x 5 mm2 area.
Figure 8 --> a) Device schematic of a top-gated FeFET on PI substratewith MoS2 as the channel semiconductor. (b) Retention characteristics of the programmed states measured after programming with +5 V or -3 V once followed by repeated reading cycles at 0.5 V. Repeatability of programming of the FeFETs to multiple conductance states in response to gradually increasing magnitude of gate voltage pulses of millisecond duration. (c) operating principle of the FeFET and transfer characteristics of a typical FeFET with channel length of 2 µm and width of 5 µm. (d) Distribution of the memory window (MW), (e) Ion and (f) Ioff of 14 measured devices from the 5x5 mm2 area.

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METHODOLOGICAL INFORMATION
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The methods used for the collection of the data are described in the full publication.