Investigation of single-event upsets in radiation hardened RRAM memory cells

Cirakoglu, Ahmet, Serb, Alex, Zwolinski, Mark and Prodromakis, Themis (2024) Investigation of single-event upsets in radiation hardened RRAM memory cells. In 2024 22nd IEEE Interregional NEWCAS Conference, NEWCAS 2024. IEEE. pp. 158-162 . (doi:10.1109/NewCAS58973.2024.10666360).

Abstract

Resistive Random Access Memory (RRAM) devices have been shown to possess intrinsic radiation-hardness and have the potential of being used in various novel hardware accelerator architectures. However, the scale of RRAM's radiation tolerance is yet to be fully explored within functional memory arrays. In this paper, we present an analysis of single-event upset (SEU) probability within RRAM-based memory cells designed to be hardened against total ionisation dose (TID) and single event effects (SEE) radiation damage mechanisms. Obtained results revealed a trade-off between the employed SEE and TID mitigation methods of having a two transistor RRAM cell in a 2T1R combination instead of the traditional 1T1R cell and using enclosed-layout transistors (ELT). The employed analysis methodology and the estimated linear energy transfer (LET) thresholds for four different cell topologies can be beneficial during the design and testing phases of RRAM-based integrated circuits.

This record has no associated files available for download.

Contributors

Author: Mark Zwolinski

Author: Themis Prodromakis

Download statistics