High-performance TiN/TaOx/TiN selectors with short-term memory characteristics
High-performance TiN/TaOx/TiN selectors with short-term memory characteristics
We present TiN/TaOx/TiN device structure showing varistor and short-term memory (STM) characteristics that could be useful for selector applications and temporal processing in one-selector one-RRAM (1S1R) architectures. The devices show high selectivity (103) and excellent endurance (one million cycles) and can sustain high-voltage stress (103s). The varistor behavior persists with device scaling down to 2.25 μm2 and thickness as thin as 2 nm. Moreover, the device exhibits a volatile switching behavior under pulse programming that could offer an additional analog output from single-digital input feed into the integrated 1S1R arrays.
Fowler-Nordheim (FN) tunneling, Zener diode, selector, short-term memory (STM), varistor
5775-5778
Roy, Sourodeep
b15e7ed3-9ae1-48e4-b5e2-1ab516bab13c
Napari, Mari
b858b4c4-3006-4051-92d5-90bee84ac37b
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
Chandrasekaran, Sridhar
988c28d0-cf56-4e49-b3de-b57e01e7e94c
Chakrabarti, Bhaswar
d0775d47-b2bc-4e62-8705-b19f5362d3f8
Simanjuntak, Firman M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
11 July 2024
Roy, Sourodeep
b15e7ed3-9ae1-48e4-b5e2-1ab516bab13c
Napari, Mari
b858b4c4-3006-4051-92d5-90bee84ac37b
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
Chandrasekaran, Sridhar
988c28d0-cf56-4e49-b3de-b57e01e7e94c
Chakrabarti, Bhaswar
d0775d47-b2bc-4e62-8705-b19f5362d3f8
Simanjuntak, Firman M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Roy, Sourodeep, Napari, Mari, Georgiadou, Dimitra G., Chandrasekaran, Sridhar, Chakrabarti, Bhaswar and Simanjuntak, Firman M.
(2024)
High-performance TiN/TaOx/TiN selectors with short-term memory characteristics.
IEEE Transactions on Electron Devices, 71 (9), .
(doi:10.1109/TED.2024.3422949).
Abstract
We present TiN/TaOx/TiN device structure showing varistor and short-term memory (STM) characteristics that could be useful for selector applications and temporal processing in one-selector one-RRAM (1S1R) architectures. The devices show high selectivity (103) and excellent endurance (one million cycles) and can sustain high-voltage stress (103s). The varistor behavior persists with device scaling down to 2.25 μm2 and thickness as thin as 2 nm. Moreover, the device exhibits a volatile switching behavior under pulse programming that could offer an additional analog output from single-digital input feed into the integrated 1S1R arrays.
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Published date: 11 July 2024
Keywords:
Fowler-Nordheim (FN) tunneling, Zener diode, selector, short-term memory (STM), varistor
Identifiers
Local EPrints ID: 496854
URI: http://eprints.soton.ac.uk/id/eprint/496854
ISSN: 1557-9646
PURE UUID: 8f279c4e-5712-4da6-a3a3-5c66b77abf3e
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Date deposited: 08 Jan 2025 08:25
Last modified: 10 Jan 2025 03:06
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Contributors
Author:
Sourodeep Roy
Author:
Mari Napari
Author:
Sridhar Chandrasekaran
Author:
Bhaswar Chakrabarti
Author:
Firman M. Simanjuntak
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