Efficient fluorescence quenching near crystalline silicon from Langmuir–Blodgett dye films
Efficient fluorescence quenching near crystalline silicon from Langmuir–Blodgett dye films
The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100> and <111>). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semiconductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor.
silicon, energy transfer, langmuir-blodgett films, solar cells, fluorescence
7251-7255
Danos, Lefteris
c831e137-37b9-42cc-ab8c-49de31038922
Greef, Robert
91063544-ed89-4738-b5f4-28a984bf5866
Markvart, Tomas
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
August 2008
Danos, Lefteris
c831e137-37b9-42cc-ab8c-49de31038922
Greef, Robert
91063544-ed89-4738-b5f4-28a984bf5866
Markvart, Tomas
f21e82ec-4e3b-4485-9f27-ffc0102fdf1c
Danos, Lefteris, Greef, Robert and Markvart, Tomas
(2008)
Efficient fluorescence quenching near crystalline silicon from Langmuir–Blodgett dye films.
Thin Solid Films, 516 (20), .
(doi:10.1016/j.tsf.2007.12.103).
Abstract
The distance dependence of the fluorescence efficiency from Langmuir Blodgett (LB) dye layers deposited on top of silicon substrates was studied for different silicon crystal orientations (<100> and <111>). The distance to the silicon surface was varied with stearic acid LB layers (SA). Spectroscopic Ellipsometry (SE) provided accurate measurements of the thickness of the separation steps and the refractive index of the dye layer. It was found that the fluorescence efficiency of the overlying LB dye layers was quenched significantly by the presence of the semiconductor at close distances to the surface. No significant difference in the fluorescence quenching for the LB dye between the two crystal orientations was observed. The results obtained are compared with previous work from fluorescence time and intensity measurements. The importance of interference effects is stressed at high semiconductor-dye distances but the fluorescence quenching observed at small distances is due to efficient energy transfer to the semiconductor.
Text
S0040609007020226
- Other
Restricted to Repository staff only
Request a copy
More information
e-pub ahead of print date: 17 December 2007
Published date: August 2008
Keywords:
silicon, energy transfer, langmuir-blodgett films, solar cells, fluorescence
Organisations:
Engineering Mats & Surface Engineerg Gp
Identifiers
Local EPrints ID: 49972
URI: http://eprints.soton.ac.uk/id/eprint/49972
ISSN: 0040-6090
PURE UUID: b7ddfac6-8846-4934-b4bc-4fa20c620ed1
Catalogue record
Date deposited: 08 Jan 2008
Last modified: 15 Mar 2024 10:01
Export record
Altmetrics
Contributors
Author:
Lefteris Danos
Author:
Robert Greef
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics