Zhou, Lingjun, Zhu, Yixiao, Li, Ke, Thomson, David J., Zhang, Weiwei, Liu, Shenghao, Cao, Wei, Littlejohns, Callum G., Yan, Xingzhao, Ebert, Martin, Banakar, Mehdi, Tran, Dehn, Meng, Fanfan, Wang, Lei, He, Zhixue, Zhang, Fan, Yu, Shaohua and Reed, Graham T. (2024) 3D integrated silicon photonics transmitters for 224 Gbaud optical interconnects. Optics Communications, 577, [131410]. (doi:10.1016/j.optcom.2024.131410).
Abstract
For the next-generation high-baud rate and low-power optical interconnects, silicon photonics has attracted widespread interest in using mature CMOS production processes to manufacture high-yield, low-cost photonic integrated circuits (PIC) and electronics integrated circuits (EIC). Using the 3D integrated silicon photonics transmitter, up to 224-Gbaud OOK signal is generated by applying a high-order partial response narrowing (HPRN) scheme and transmitted over 300-m standard single-mode fiber (SSMF) with a bit-error rate (BER) below the 20% hard-decision forward error-correction (HD-FEC) threshold of 1.5 × 10−2. Furthermore, for high-order modulation formats, the transmission of 260-Gb/s (130-Gbaud) PAM-4 and 300-Gb/s (120-Gbaud) PAM-6 Nyquist-shaped signals over 300-m SSMF are also realized, below the 20% HD-FEC and 25% soft-decision forward error-correction (SD-FEC) thresholds respectively. Our work implies the feasibility of low-cost optical transceivers for ultra-high-baud-rate short-reach data center optical interconnects.
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