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Integrated ovonic threshold switching selector and resistive switching memory 1S1R in electrodeposited ZnTe thin films

Integrated ovonic threshold switching selector and resistive switching memory 1S1R in electrodeposited ZnTe thin films
Integrated ovonic threshold switching selector and resistive switching memory 1S1R in electrodeposited ZnTe thin films
Chalcogenide materials are promising candidates for next generation memories since they can be stacked to integrate both two-terminal non-volatile memory and volatile selector devices for large-scale-integration crossbar arrays. Traditionally, devices based on chalcogenides have been fabricated using vacuum-dependent and high-temperature methods. In this study, the first demonstration of ovonic threshold switching (OTS) and resistive switching (RS) behaviors in zinc telluride (ZnTe) thin films produced via a rapid, cost-effective, and vacuum-free electrodeposition technique is presented. This method also allows for control over ZnTe film composition within the same electrolyte by varying the deposition potentials. These findings reveal that stoichiometric ZnTe thin films exhibit OTS behavior, while Te-rich ZnTe films display RS characteristics. The OTS selectors show robust threshold switching with controllable operating current levels, whereas the RS memory devices demonstrate reliable switching at low voltages, achieving multilevel switching through variations in DC sweeping voltages. A one-selector-one-resistor (1S1R) architecture is successfully implemented by connecting the stoichiometric ZnTe selector in series with the Te-rich ZnTe memory element, thereby validating the potential of OTS as a selector for crossbar applications. This work provides a significant advancement toward constructing stacked structures of memory and selector devices through electrodeposition methods, paving the way for high-density crossbar array applications.
1S1R, ZnTe, electrodeposition, ovonic threshold switching, resistive switching
2365-709X
Hamdiyah, Ayoub H. Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Hussein, Haytham
2a3e32d5-a214-4cc0-9333-152c7c06c8f9
Zhang, Tongjun
4a460cd9-f2c8-41db-8008-1cda74895b24
Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Kemp, Neil T.
c924368b-2935-4170-be58-d88a35fa5bd9
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Hamdiyah, Ayoub H. Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Hussein, Haytham
2a3e32d5-a214-4cc0-9333-152c7c06c8f9
Zhang, Tongjun
4a460cd9-f2c8-41db-8008-1cda74895b24
Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Kemp, Neil T.
c924368b-2935-4170-be58-d88a35fa5bd9
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978

Hamdiyah, Ayoub H. Jaafar, Hussein, Haytham, Zhang, Tongjun, Zhelev, Nikolay, Kemp, Neil T., Reid, Gillian, De Groot, Kees, Bartlett, Philip N. and Huang, Ruomeng (2025) Integrated ovonic threshold switching selector and resistive switching memory 1S1R in electrodeposited ZnTe thin films. Advanced Materials Technologies, 10 (14), [2500168]. (doi:10.1002/admt.202500168).

Record type: Article

Abstract

Chalcogenide materials are promising candidates for next generation memories since they can be stacked to integrate both two-terminal non-volatile memory and volatile selector devices for large-scale-integration crossbar arrays. Traditionally, devices based on chalcogenides have been fabricated using vacuum-dependent and high-temperature methods. In this study, the first demonstration of ovonic threshold switching (OTS) and resistive switching (RS) behaviors in zinc telluride (ZnTe) thin films produced via a rapid, cost-effective, and vacuum-free electrodeposition technique is presented. This method also allows for control over ZnTe film composition within the same electrolyte by varying the deposition potentials. These findings reveal that stoichiometric ZnTe thin films exhibit OTS behavior, while Te-rich ZnTe films display RS characteristics. The OTS selectors show robust threshold switching with controllable operating current levels, whereas the RS memory devices demonstrate reliable switching at low voltages, achieving multilevel switching through variations in DC sweeping voltages. A one-selector-one-resistor (1S1R) architecture is successfully implemented by connecting the stoichiometric ZnTe selector in series with the Te-rich ZnTe memory element, thereby validating the potential of OTS as a selector for crossbar applications. This work provides a significant advancement toward constructing stacked structures of memory and selector devices through electrodeposition methods, paving the way for high-density crossbar array applications.

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Adv Materials Technologies - 2025 - Jaafar - Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory - Version of Record
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Accepted/In Press date: 9 April 2025
e-pub ahead of print date: 9 April 2025
Published date: 22 July 2025
Keywords: 1S1R, ZnTe, electrodeposition, ovonic threshold switching, resistive switching

Identifiers

Local EPrints ID: 501597
URI: http://eprints.soton.ac.uk/id/eprint/501597
ISSN: 2365-709X
PURE UUID: fa78b683-1528-4a1f-94d1-65c8039552f9
ORCID for Ayoub H. Jaafar Hamdiyah: ORCID iD orcid.org/0000-0001-7305-4542
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for Ruomeng Huang: ORCID iD orcid.org/0000-0003-1185-635X

Catalogue record

Date deposited: 04 Jun 2025 16:43
Last modified: 11 Sep 2025 02:36

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Contributors

Author: Ayoub H. Jaafar Hamdiyah ORCID iD
Author: Haytham Hussein
Author: Tongjun Zhang
Author: Nikolay Zhelev
Author: Neil T. Kemp
Author: Gillian Reid ORCID iD
Author: Kees De Groot ORCID iD
Author: Ruomeng Huang ORCID iD

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