READ ME File For 'Dataset for Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films'

Dataset DOI: 10.5258/SOTON/D3405

ReadMe Author: Ruomeng Huang, University of Southampton 

This dataset supports the publication: Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films
AUTHORS: Ayoub H. Jaafar, Haytham Hussein, Tongjun Zhang, Nikolay Zhelev, Neil T. Kemp, Gillian Reid, Kees de Groot, Philip N. Bartlett, and Ruomeng Huang
TITLE: Integrated Ovonic Threshold Switching Selector and Resistive Switching Memory 1S1R in Electrodeposited ZnTe Thin Films
JOURNAL: Advanced Materials Technologies
PAPER DOI IF KNOWN: doi.org/10.1002/admt.202500168


This dataset contains:
The raw data of figure 1 to 6.

The figures are as follows:

Figure 1. (a) Overlaid forward and reverse CV cycles of the Si/SiO2/TiN substrate in 0.1 M [Bmpyr][TFS] in dry CH2Cl2/MeCN (2:1 by vol.) containing 5 mM Zn(TFSI)2 + 300 µM [(n-C4H9)4N]2[TeCl6] recorded at a scan rate of 0.05 V s–1. Current-time transient for ZnTe electrodeposition at a deposition potential of (b) -0.25 V vs Ag|AgCl, and (c) -1 V vs Ag|AgCl. 


Figure 2. SEM image showing the ZnTe film electrodeposited at (a) -0.25 V, and (d) –1.0 V. (b)-(c) and (e)-(f) EDX element maps showing the deposition of Zn and Te across the substrate.

Figure 3. Electrical characteristics of stoichiometric ZnTe-based OTS selectors. (a) Schematic of stoichiometric ZnTe thin film-based OTS selector probed between TiN and W electrodes, TiN/ZnTe/W. (b) Consecutive 10 DC-IV sweeps of the OTS selector, representing a typical volatile RS behaviour. (c) DC endurance characteristics. (d) Consecutive 10 DC-IV sweeps of the OTS selector after forming at high CC level. 

Figure 4. Electrical characteristics of Te-rich ZnTe-based RS memory. (a) Schematic of Te-rich ZnTe thin film-based RS memories probed between TiN and W electrodes, TiN/ZnTe/W. (b) Consecutive I-V characteristics of the RS memory, representing a typical bipolar switching. (c) DC endurance characteristics. (d) Cumulative probability of the HRS and LRS.

Figure 5. Multilevel RS behaviour of the Te-rich ZnTe thin film-based RS memory. (a) DC-IV characteristics showing the multilevel RS behaviour induced by varying the applied voltage sweep. (b) DC endurance of the device showing the reproducible multilevel RS behaviour under different DC sweep voltages, read @ 0.1 V.

Figure 6. Electrical characteristics of 1S1R structure based on electrodeposited ZnTe films. (a) Schematic of a stoichiometric ZnTe film-based selector and Te-rich ZnTe film based-RRAM connected in series through the electrical wire connection. (b) I-V switching curves of the selector (yellow curve) and RRAM (blue curve). (c) Successive 20 DC-IV curves of the 1S1R structure. 

Date of data collection: October 2019 to April 2022

Information about geographic location of data collection: United Kingdom

Licence: CC-BY

Related projects: ADEPT project funded by a Programme Grant from the EPSRC (EP/N035437/1). 


Date that the file was created: May, 2025