A self-aligned high-mobility graphene transistor: decoupling the channel with fluorographene to reduce scattering
A self-aligned high-mobility graphene transistor: decoupling the channel with fluorographene to reduce scattering
The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
field-effect transistors, fluorographene, graphene, scattering, self-aligned
6519-6525
Ho, Kuan I.
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Boutchich, Mohamed
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Su, Ching Yuan
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Moreddu, Rosalia
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Marianathan, Eugene Sebastian Raj
0e608e1e-74ba-4f44-839c-996ad38cea10
Montes, Laurent
35192900-809c-4da4-af56-1b3dada415f9
Lai, Chao Sung
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1 November 2015
Ho, Kuan I.
b3250014-94d6-4239-a9b2-ebe6f3f8d450
Boutchich, Mohamed
7d0f80c6-5497-40ed-adfa-82dfef93d909
Su, Ching Yuan
fb75d295-07f1-49c2-93b5-38a70cc715e4
Moreddu, Rosalia
8a5d77bc-dac4-4966-baa3-be26c5eec1ef
Marianathan, Eugene Sebastian Raj
0e608e1e-74ba-4f44-839c-996ad38cea10
Montes, Laurent
35192900-809c-4da4-af56-1b3dada415f9
Lai, Chao Sung
e8e98d37-f713-417d-9f82-89d14aea5c4d
Ho, Kuan I., Boutchich, Mohamed, Su, Ching Yuan, Moreddu, Rosalia, Marianathan, Eugene Sebastian Raj, Montes, Laurent and Lai, Chao Sung
(2015)
A self-aligned high-mobility graphene transistor: decoupling the channel with fluorographene to reduce scattering.
Advanced Materials, 27 (41), .
(doi:10.1002/adma.201502544).
Abstract
The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.
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Published date: 1 November 2015
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Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords:
field-effect transistors, fluorographene, graphene, scattering, self-aligned
Identifiers
Local EPrints ID: 503357
URI: http://eprints.soton.ac.uk/id/eprint/503357
ISSN: 0935-9648
PURE UUID: a15ccb33-59c4-40f1-825b-dca9bee53758
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Date deposited: 29 Jul 2025 17:01
Last modified: 30 Jul 2025 02:14
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Contributors
Author:
Kuan I. Ho
Author:
Mohamed Boutchich
Author:
Ching Yuan Su
Author:
Rosalia Moreddu
Author:
Eugene Sebastian Raj Marianathan
Author:
Laurent Montes
Author:
Chao Sung Lai
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