Evaluation of thick silicon nitride film properties at 300 mm scale for high-Q photonic devices
Evaluation of thick silicon nitride film properties at 300 mm scale for high-Q photonic devices
This work evaluates thick silicon nitride (SiN) film properties using various inline and offline advanced metrology data analysis. The thick SiN films for photonic applications are typically prepared by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques. Our present study combines high-volume inline and high-accuracy offline metrology to best characterize our thick SiN films. The developed SiN film compositional analysis has been carried out using inline X-ray photoelectron spectroscopy (XPS) to get fast feedback on the composition and contamination of the film surface. Finally, we present a refractive index (n) comparison for annealed and unannealed PECVD/LPCVD wafers.
Advanced metrology, LPCVD, PECVD, VASE, XPS, annealed, composition, refractive index, thick SiN
420-427
Kar, Soumen
ba86e843-2641-46d8-be0a-836be81a599a
Gangi, Nicholas W.
4eb3573a-17c6-498c-8ca5-fffb99263d11
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Carpenter, Lewis G.
5877a1f3-c300-41a8-9c8c-4d5b53f54b3e
Fahrenkopf, Nicholas M.
7312ef2f-4640-4a79-b189-02822b9c48aa
Timalsina, Yukta
ca1223d1-cd77-4a22-bb45-a792d6d2656a
Kar, Soumen
ba86e843-2641-46d8-be0a-836be81a599a
Gangi, Nicholas W.
4eb3573a-17c6-498c-8ca5-fffb99263d11
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Carpenter, Lewis G.
5877a1f3-c300-41a8-9c8c-4d5b53f54b3e
Fahrenkopf, Nicholas M.
7312ef2f-4640-4a79-b189-02822b9c48aa
Timalsina, Yukta
ca1223d1-cd77-4a22-bb45-a792d6d2656a
Kar, Soumen, Gangi, Nicholas W., Morgan, Katrina A., Carpenter, Lewis G., Fahrenkopf, Nicholas M. and Timalsina, Yukta
(2025)
Evaluation of thick silicon nitride film properties at 300 mm scale for high-Q photonic devices.
IEEE Transactions on Semiconductor Manufacturing, 38 (3), .
(doi:10.1109/TSM.2025.3583925).
Abstract
This work evaluates thick silicon nitride (SiN) film properties using various inline and offline advanced metrology data analysis. The thick SiN films for photonic applications are typically prepared by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques. Our present study combines high-volume inline and high-accuracy offline metrology to best characterize our thick SiN films. The developed SiN film compositional analysis has been carried out using inline X-ray photoelectron spectroscopy (XPS) to get fast feedback on the composition and contamination of the film surface. Finally, we present a refractive index (n) comparison for annealed and unannealed PECVD/LPCVD wafers.
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TSM3583925
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e-pub ahead of print date: 27 June 2025
Keywords:
Advanced metrology, LPCVD, PECVD, VASE, XPS, annealed, composition, refractive index, thick SiN
Identifiers
Local EPrints ID: 504148
URI: http://eprints.soton.ac.uk/id/eprint/504148
ISSN: 0894-6507
PURE UUID: 99f90049-7663-4a6b-a93a-448258086b83
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Date deposited: 28 Aug 2025 16:30
Last modified: 29 Aug 2025 01:45
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Contributors
Author:
Soumen Kar
Author:
Nicholas W. Gangi
Author:
Katrina A. Morgan
Author:
Lewis G. Carpenter
Author:
Nicholas M. Fahrenkopf
Author:
Yukta Timalsina
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