Solution‐processed Bi2S3 nanostructures for flexible memory and neuromorphic computing
Solution‐processed Bi2S3 nanostructures for flexible memory and neuromorphic computing
The rapid advancement of wearable computing and edge AI technologies is driving the need for low-temperature, flexible, and neuromorphic-compatible electronic materials. In this work, the successful low-temperature deposition of Bi 2S 3 thin films via an in situ solvothermal method using the single-source precursor (SSP) [Bi(S 2P(OC 3H₇) 2) 3] is reported. This solution-processed approach enables the formation of high-quality, crystalline, and stoichiometric Bi 2S 3 films over a broad temperature window (140–200 °C), compatible with a range of substrates including silicon, polyimide, and PET. Leveraging this deposition technique, Bi 2S 3-based memristors are fabricated on both rigid and flexible substrates. The devices exhibit stable resistive switching behavior and demonstrate mechanical and electrical robustness under stress conditions. Furthermore, the memristors effectively emulate long-term synaptic plasticity, achieving high learning accuracy. These findings establish SSP-derived Bi 2S 3 films as a promising material platform for next-generation flexible neuromorphic computing and memory technologies.
BiS, flexible memristor, neuromorphic computing, single source precursor, solution process, Bi S
Harke, Sayali Shrishail
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Kapur, Omesh
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Dai, Peng
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Zhang, Tongjun
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Ding, Bingkai
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Ding, Bohao
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Huang, Ruomeng
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Gurnani, Chitra
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4 November 2025
Harke, Sayali Shrishail
a3fc2dcf-3445-46ca-bfd3-e625d96c1dd4
Kapur, Omesh
2be52575-505f-472f-ad9c-ce6fe84c20fd
Dai, Peng
1150a00a-e54b-438b-bf51-4e8521c07f66
Zhang, Tongjun
4a460cd9-f2c8-41db-8008-1cda74895b24
Ding, Bingkai
4dc4abe4-4fec-45a3-ab1d-025e9297278b
Ding, Bohao
0191b1f3-ca5e-45c6-931b-f89b0ae1643f
Huang, Ruomeng
55c6fba5-0275-4471-af5c-fb0dd2daaa64
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Harke, Sayali Shrishail, Kapur, Omesh, Dai, Peng, Zhang, Tongjun, Ding, Bingkai, Ding, Bohao, Huang, Ruomeng and Gurnani, Chitra
(2025)
Solution‐processed Bi2S3 nanostructures for flexible memory and neuromorphic computing.
Advanced Electronic Materials, 11 (18), [e00370].
(doi:10.1002/aelm.202500370).
Abstract
The rapid advancement of wearable computing and edge AI technologies is driving the need for low-temperature, flexible, and neuromorphic-compatible electronic materials. In this work, the successful low-temperature deposition of Bi 2S 3 thin films via an in situ solvothermal method using the single-source precursor (SSP) [Bi(S 2P(OC 3H₇) 2) 3] is reported. This solution-processed approach enables the formation of high-quality, crystalline, and stoichiometric Bi 2S 3 films over a broad temperature window (140–200 °C), compatible with a range of substrates including silicon, polyimide, and PET. Leveraging this deposition technique, Bi 2S 3-based memristors are fabricated on both rigid and flexible substrates. The devices exhibit stable resistive switching behavior and demonstrate mechanical and electrical robustness under stress conditions. Furthermore, the memristors effectively emulate long-term synaptic plasticity, achieving high learning accuracy. These findings establish SSP-derived Bi 2S 3 films as a promising material platform for next-generation flexible neuromorphic computing and memory technologies.
Text
Adv Elect Materials - 2025 - Harke - Solution‐Processed Bi2S3 Nanostructures for Flexible Memory and Neuromorphic Computing
- Version of Record
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e-pub ahead of print date: 30 September 2025
Published date: 4 November 2025
Keywords:
BiS, flexible memristor, neuromorphic computing, single source precursor, solution process, Bi S
Identifiers
Local EPrints ID: 507286
URI: http://eprints.soton.ac.uk/id/eprint/507286
ISSN: 2199-160X
PURE UUID: e80c17d6-0287-4c24-aa66-f68d67c87816
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Date deposited: 03 Dec 2025 17:33
Last modified: 03 Dec 2025 17:33
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Contributors
Author:
Sayali Shrishail Harke
Author:
Omesh Kapur
Author:
Peng Dai
Author:
Tongjun Zhang
Author:
Bingkai Ding
Author:
Bohao Ding
Author:
Ruomeng Huang
Author:
Chitra Gurnani
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