Solution-processed Bi₂S₃ nanostructures for flexible memory and neuromorphic computing

Abstract

The rapid advancement of wearable computing and edge AI technologies is driving the need for low-temperature, flexible, and neuromorphic-compatible electronic materials. In this work, the successful low-temperature deposition of Bi₂S₃ thin films via an in situ solvothermal method using the single-source precursor (SSP) [Bi(S₂P(OC₃H₇)₂)₃] is reported. This solution-processed approach enables the formation of high-quality, crystalline, and stoichiometric Bi₂S₃ films over a broad temperature window (140–200 °C), compatible with a range of substrates including silicon, polyimide, and PET. Leveraging this deposition technique, Bi₂S₃-based memristors are fabricated on both rigid and flexible substrates. The devices exhibit stable resistive switching behavior and demonstrate mechanical and electrical robustness under stress conditions. Furthermore, the memristors effectively emulate long-term synaptic plasticity, achieving high learning accuracy. These findings establish SSP-derived Bi₂S₃ films as a promising material platform for next-generation flexible neuromorphic computing and memory technologies.

More information

Identifiers

ORCID for Peng Dai: orcid.org/0000-0002-5973-9155

ORCID for Tongjun Liu: orcid.org/0000-0003-4931-1734

ORCID for Ruomeng Huang: orcid.org/0000-0003-1185-635X

Catalogue record

Export record

Altmetrics