Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells
Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlxGa1?xAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature, concentration, and quantum-well-width dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin lifetime with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin-relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
magnetic relaxation, two-dimensional electron gas, gallium arsenide, III-V semiconductors, gallium compounds, semiconductor quantum wells, optical pumping, carrier lifetime, fermi level, exchange interactions (electron), aluminium compounds
165309-[8pp]
Leyland, W.J.H.
e6a7d9aa-be90-41ef-90db-bc411363b84b
John, G.H.
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Harley, R.T.
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Glazov, M.M.
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Ivchenko, E.L.
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Ritchie, D.A.
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Farrer, I.
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Shields, A.J.
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Henini, M.
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10 April 2007
Leyland, W.J.H.
e6a7d9aa-be90-41ef-90db-bc411363b84b
John, G.H.
74030a46-249b-425c-9c15-cf9eeff3a519
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Glazov, M.M.
a014ed49-8ae2-4d25-91f4-94b79265a8ab
Ivchenko, E.L.
e6eca4a6-c8ae-4a7a-b433-4c203a511435
Ritchie, D.A.
83562b7e-0986-4822-9cfe-8c4ac95596c7
Farrer, I.
8e39904e-2255-4432-be5b-1b46c5b0dd9a
Shields, A.J.
2d016dc0-78a3-4368-9f54-49b00f381a2d
Henini, M.
dffaac17-caab-4a18-9eb6-c858d8bb1ed2
Leyland, W.J.H., John, G.H., Harley, R.T., Glazov, M.M., Ivchenko, E.L., Ritchie, D.A., Farrer, I., Shields, A.J. and Henini, M.
(2007)
Enhanced spin-relaxation time due to electron-electron scattering in semiconductor quantum wells.
Physical Review B, 75 (16), .
(doi:10.1103/PhysRevB.75.165309).
Abstract
We present a detailed experimental and theoretical analysis of the spin dynamics of two-dimensional electron gases (2DEGs) in a series of n-doped GaAs/AlxGa1?xAs quantum wells. Picosecond-resolution polarized pump-probe reflection techniques were applied in order to study in detail the temperature, concentration, and quantum-well-width dependencies of the spin relaxation rate of a small photoexcited electron population. A rapid enhancement of the spin lifetime with temperature up to a maximum near the Fermi temperature of the 2DEG was demonstrated experimentally. These observations are consistent with the D'yakonov-Perel' spin-relaxation mechanism controlled by electron-electron collisions. The experimental results and theoretical predictions for the spin relaxation times are in good quantitative agreement.
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Published date: 10 April 2007
Keywords:
magnetic relaxation, two-dimensional electron gas, gallium arsenide, III-V semiconductors, gallium compounds, semiconductor quantum wells, optical pumping, carrier lifetime, fermi level, exchange interactions (electron), aluminium compounds
Identifiers
Local EPrints ID: 50865
URI: http://eprints.soton.ac.uk/id/eprint/50865
ISSN: 1550-235X
PURE UUID: 6348668b-3869-4ae5-9aa1-c1bac913480f
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Date deposited: 08 Apr 2008
Last modified: 15 Mar 2024 10:12
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Contributors
Author:
W.J.H. Leyland
Author:
G.H. John
Author:
R.T. Harley
Author:
M.M. Glazov
Author:
E.L. Ivchenko
Author:
D.A. Ritchie
Author:
I. Farrer
Author:
A.J. Shields
Author:
M. Henini
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