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Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
We report on the current properties of Al1-xInxN (x ~ 0.18) layers lattice-matched (LM) to GaN and their specific use to realize nearly strain-free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state-of-the-art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of (1–5) × 1018 cm-3 and a large Stokes shift (~800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/AlInN multiple quantum wells (QWs) suitable for near-infrared intersubband applications. A built-in electric field of 3.64 MV cm-1 solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain-free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack-free highly reflective AlInN/GaN distributed Bragg reflectors (R > 99%) and high quality factor microcavities (Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature (RT) lasing of a LM AlInN/GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride-based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two-dimensional electron gas sheet carrier density (ns ~ 2.6 × 1013 cm-2) combined with a RT mobility µe ~ 1170 cm2 V-1 s-1 and a low sheet resistance, R ~ 210 Ω/square.
0022-3727
6328-6344
Butté, R.
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Carlin, J-F
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Feltin, E.
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Gonschorek, M.
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Nicolay, S.
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Christmann, G.
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Simeonov, D.
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Castiglia, A.
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Dorsaz, J.
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Buehlmann, H.J.
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Christopoulos, S.
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Baldassarri Höger von Högersthal, G.
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Grundy, A.J.D.
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Mosca, M.
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Pinquier, C.
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Py, M.A.
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Demangeot, F.
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Frandon, J.
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Lagoudakis, P.G.
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Baumberg, J.J.
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Grandjean, N.
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Butté, R.
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Carlin, J-F
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Feltin, E.
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Gonschorek, M.
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Nicolay, S.
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Christmann, G.
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Simeonov, D.
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Castiglia, A.
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Dorsaz, J.
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Buehlmann, H.J.
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Christopoulos, S.
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Baldassarri Höger von Högersthal, G.
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Grundy, A.J.D.
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Mosca, M.
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Pinquier, C.
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Py, M.A.
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Demangeot, F.
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Frandon, J.
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Lagoudakis, P.G.
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Baumberg, J.J.
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Grandjean, N.
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Butté, R., Carlin, J-F, Feltin, E., Gonschorek, M., Nicolay, S., Christmann, G., Simeonov, D., Castiglia, A., Dorsaz, J., Buehlmann, H.J., Christopoulos, S., Baldassarri Höger von Högersthal, G., Grundy, A.J.D., Mosca, M., Pinquier, C., Py, M.A., Demangeot, F., Frandon, J., Lagoudakis, P.G., Baumberg, J.J. and Grandjean, N. (2007) Current status of AlInN layers lattice-matched to GaN for photonics and electronics. Journal of Physics D: Applied Physics, 40 (20), 6328-6344. (doi:10.1088/0022-3727/40/20/S16).

Record type: Article

Abstract

We report on the current properties of Al1-xInxN (x ~ 0.18) layers lattice-matched (LM) to GaN and their specific use to realize nearly strain-free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state-of-the-art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of (1–5) × 1018 cm-3 and a large Stokes shift (~800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/AlInN multiple quantum wells (QWs) suitable for near-infrared intersubband applications. A built-in electric field of 3.64 MV cm-1 solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain-free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack-free highly reflective AlInN/GaN distributed Bragg reflectors (R > 99%) and high quality factor microcavities (Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature (RT) lasing of a LM AlInN/GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride-based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two-dimensional electron gas sheet carrier density (ns ~ 2.6 × 1013 cm-2) combined with a RT mobility µe ~ 1170 cm2 V-1 s-1 and a low sheet resistance, R ~ 210 Ω/square.

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Published date: 21 October 2007

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Local EPrints ID: 50872
URI: http://eprints.soton.ac.uk/id/eprint/50872
ISSN: 0022-3727
PURE UUID: 24bd8ed5-4a2c-432d-8c38-f1eca2dc902b

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Date deposited: 08 Apr 2008
Last modified: 02 Nov 2018 17:31

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Contributors

Author: R. Butté
Author: J-F Carlin
Author: E. Feltin
Author: M. Gonschorek
Author: S. Nicolay
Author: G. Christmann
Author: D. Simeonov
Author: A. Castiglia
Author: J. Dorsaz
Author: H.J. Buehlmann
Author: S. Christopoulos
Author: G. Baldassarri Höger von Högersthal
Author: A.J.D. Grundy
Author: M. Mosca
Author: C. Pinquier
Author: M.A. Py
Author: F. Demangeot
Author: J. Frandon
Author: P.G. Lagoudakis
Author: J.J. Baumberg
Author: N. Grandjean

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