Gated spin relaxation in (1 1 0)-oriented quantum wells

Henini, M., Karimov, O.Z., John, G.H., Harley, R.T. and Airey, R. J. (2004) Gated spin relaxation in (1 1 0)-oriented quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 23 (3-4), 309-314. (doi:10.1016/j.physe.2003.11.280).

Abstract

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE growth of good-quality quantum wells, judged by the width of low-temperature excitonic photoluminescence. At 170 K the electron spin relaxation rate in (1 1 0)-oriented wells shows a 100-fold reduction compared to equivalent (1 0 0)-oriented wells and also a 10-fold increase with applied electric field from 20 to 80 kV cm?1. There is evidence for similar dramatic effects at 300 K. Spin relaxation is field independent below 20 kV cm?1 reflecting quantum well asymmetry. The results indicate the achievability of voltage-gateable quantum well spin memory time longer than 10 ns at room temperature simultaneously with high electron mobility.

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