The University of Southampton
University of Southampton Institutional Repository

Gated spin relaxation in (1 1 0)-oriented quantum wells

Gated spin relaxation in (1 1 0)-oriented quantum wells
Gated spin relaxation in (1 1 0)-oriented quantum wells
Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE growth of good-quality quantum wells, judged by the width of low-temperature excitonic photoluminescence. At 170 K the electron spin relaxation rate in (1 1 0)-oriented wells shows a 100-fold reduction compared to equivalent (1 0 0)-oriented wells and also a 10-fold increase with applied electric field from 20 to 80 kV cm?1. There is evidence for similar dramatic effects at 300 K. Spin relaxation is field independent below 20 kV cm?1 reflecting quantum well asymmetry. The results indicate the achievability of voltage-gateable quantum well spin memory time longer than 10 ns at room temperature simultaneously with high electron mobility.
quantum wells, spin dynamics, rashba effect
1386-9477
309-314
Henini, M.
dffaac17-caab-4a18-9eb6-c858d8bb1ed2
Karimov, O.Z.
e5137e05-4b16-484e-aae8-952a6fd69da4
John, G.H.
74030a46-249b-425c-9c15-cf9eeff3a519
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Airey, R. J.
1b6f67ff-26af-47ab-b23b-2051ee410e32
Henini, M.
dffaac17-caab-4a18-9eb6-c858d8bb1ed2
Karimov, O.Z.
e5137e05-4b16-484e-aae8-952a6fd69da4
John, G.H.
74030a46-249b-425c-9c15-cf9eeff3a519
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Airey, R. J.
1b6f67ff-26af-47ab-b23b-2051ee410e32

Henini, M., Karimov, O.Z., John, G.H., Harley, R.T. and Airey, R. J. (2004) Gated spin relaxation in (1 1 0)-oriented quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 23 (3-4), 309-314. (doi:10.1016/j.physe.2003.11.280).

Record type: Article

Abstract

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (1 1 0)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE growth of good-quality quantum wells, judged by the width of low-temperature excitonic photoluminescence. At 170 K the electron spin relaxation rate in (1 1 0)-oriented wells shows a 100-fold reduction compared to equivalent (1 0 0)-oriented wells and also a 10-fold increase with applied electric field from 20 to 80 kV cm?1. There is evidence for similar dramatic effects at 300 K. Spin relaxation is field independent below 20 kV cm?1 reflecting quantum well asymmetry. The results indicate the achievability of voltage-gateable quantum well spin memory time longer than 10 ns at room temperature simultaneously with high electron mobility.

This record has no associated files available for download.

More information

Published date: July 2004
Keywords: quantum wells, spin dynamics, rashba effect
Organisations: Quantum, Light & Matter Group

Identifiers

Local EPrints ID: 50892
URI: http://eprints.soton.ac.uk/id/eprint/50892
ISSN: 1386-9477
PURE UUID: eb754402-80bb-44ca-98b4-bce1083b260e

Catalogue record

Date deposited: 09 Apr 2008
Last modified: 08 Jan 2022 13:02

Export record

Altmetrics

Contributors

Author: M. Henini
Author: O.Z. Karimov
Author: G.H. John
Author: R.T. Harley
Author: R. J. Airey

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×