Spectroscopic characterization of bismuth active centres in germanosilicate optical fibers: Impact of Ge concentration on E–S band amplifier gain
Spectroscopic characterization of bismuth active centres in germanosilicate optical fibers: Impact of Ge concentration on E–S band amplifier gain
Demonstrate an optimized fabrication process for bismuth germanium doped silica glass fiber using MCVD process with solution doping technique and reported the requirement of ∼7mol% germanium to achieve recorded ∼41dB gain with ∼3-7dB noise figure at E-S band in a single pass configuration.
Reporting a details spectroscopic study on bismuth active centres responsible for achieving ∼41dB gain in E-S band to identify the nature of bismuth oxidation state i.e. Bi(0).
Highlights
Modeling the observed spectral transition using an energy level diagram of Bi(0) to explain all the spectral process and E-S band gain properly.
Reporting the glass host dependency on the absorptions and emissions of bismuth active centres and its effects on E-S band amplifier outputs.
This study will help to get a good control on bismuth germanium doped fiber fabrication and their application on E-S band amplifier.
Halder, Arindam
9a8529b1-dce4-4d6c-964c-2fa2e8cf4d67
Kakaei, Zahra
4f1c2b7a-2457-42ca-853d-585f3a0644bc
Halder, Arindam
9a8529b1-dce4-4d6c-964c-2fa2e8cf4d67
Kakaei, Zahra
4f1c2b7a-2457-42ca-853d-585f3a0644bc
Halder, Arindam and Kakaei, Zahra
(2026)
Spectroscopic characterization of bismuth active centres in germanosilicate optical fibers: Impact of Ge concentration on E–S band amplifier gain.
Journal of Luminescence.
(doi:10.1016/j.jlumin.2026.121844).
Abstract
Demonstrate an optimized fabrication process for bismuth germanium doped silica glass fiber using MCVD process with solution doping technique and reported the requirement of ∼7mol% germanium to achieve recorded ∼41dB gain with ∼3-7dB noise figure at E-S band in a single pass configuration.
Reporting a details spectroscopic study on bismuth active centres responsible for achieving ∼41dB gain in E-S band to identify the nature of bismuth oxidation state i.e. Bi(0).
Highlights
Modeling the observed spectral transition using an energy level diagram of Bi(0) to explain all the spectral process and E-S band gain properly.
Reporting the glass host dependency on the absorptions and emissions of bismuth active centres and its effects on E-S band amplifier outputs.
This study will help to get a good control on bismuth germanium doped fiber fabrication and their application on E-S band amplifier.
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More information
Submitted date: 22 September 2025
Accepted/In Press date: 6 March 2026
e-pub ahead of print date: 7 March 2026
Identifiers
Local EPrints ID: 509977
URI: http://eprints.soton.ac.uk/id/eprint/509977
ISSN: 0022-2313
PURE UUID: 18b68562-88a7-4c90-bd58-749e8ace744d
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Date deposited: 12 Mar 2026 17:40
Last modified: 13 Mar 2026 03:09
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Contributors
Author:
Arindam Halder
Author:
Zahra Kakaei
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