READ ME File For “Electrical Characterisation Data for Micro/Nano-Electro-Mechanical (M/NEM) Switch Devices for IoT Power Delivery Applications” Dataset DOI: 10.5258/SOTON/D3772 ReadMe Author: Marlon McCarthy, University of Southampton ORCID ID: 0000-0002-4462-5227 This dataset supports the thesis entitled: “An Investigation into Low-Power Micro/Nano-Electro-Mechanical (M/NEM) Switch Devices for IoT Power Delivery Applications Using Silicon Structures and Titanium Nitride (TiN) Contacts.” AWARDED BY: University of Southampton DATE OF AWARD: 2026 Date of data collection: July 2021–December 2024 Information about geographic location of data collection: University of Southampton, Southampton, United Kingdom Institute of Microelectronics (IME), Singapore Licence: Creative Commons Attribution 4.0 International (CC BY 4.0) Related projects/Funders: Engineering and Physical Sciences Research Council (EPSRC) A*STAR collaboration -------------------- DATA & FILE OVERVIEW -------------------- This dataset contains: 1. Raw measurement files (.csv) Keysight B1500A semiconductor parameter analyser exports containing gate sweep electrical measurements of MEMS devices. 2. Processed data file (“all processed data”) Compiled tables linking device geometry, fabrication properties, simulation results, and measured electrical behavior. These tables were used to generate figures and analysis presented in the thesis. -------------------- Raw file naming convention Raw measurement filenames encode wafer thickness, device design, and physical sample index. Format (30 µm devices): MEMS[thickness]uD[device design number]S[sample number].csv Example: MEMS30uD19S3.csv Where: • MEMS = device type identifier • 30u = substrate thickness (30 µm silicon) • D19 = device design number • S3 = physical device sample (distinct fabricated device) Each file corresponds to a single physical MEMS device. Multiple samples (e.g. S1–S5) represent nominally identical devices fabricated from the same layout and used to characterise device-to-device variability. -------------------- 10 µm device files Some files include measurements of multiple devices: Format: MEMS10UM_D[device range]_S[sample range].csv Example: MEMS10UM_D1-6_S1-5.csv These contain sequential measurements of multiple device designs and physical samples within a single sweep file. Device identity is determined using the processed data tables. -------------------- Relationship between files, if important for context: Raw measurement files provide electrical data for individual devices. The processed data file aggregates measurements across devices and links them to simulation results and physical dimensions. Figures and conclusions in the thesis are derived from the processed data, which in turn originates from the raw measurement files. Additional related data collected that was not included in the current data package: Microscopy images (optical and FIB/SEM) and intermediate analysis scripts were used during analysis but are not required to reproduce the numerical results presented in the thesis. If data was derived from another source, list source: Simulation data was generated by the author using finite-element modeling (COMSOL Multiphysics). No external datasets were used. If there are multiple versions of the dataset, list updates: No previous public versions of this dataset exist. -------------------- METHODOLOGICAL INFORMATION -------------------- Description of methods used for collection/generation of data Electrical measurements were performed using a semiconductor parameter analyser (Keysight B1500A). MEMS switches were probed using micropositioner probe stations. Gate voltage was swept while monitoring drain, source, and gate leakage currents to determine pull-in behaviour and leakage characteristics. Detailed experimental design and device operation are described in the associated doctoral thesis. -------------------- Methods for processing the data Raw data files were exported from the instrument as tab-delimited text. Processing steps included: • Extraction of voltage and current columns • Identification of pull-in events • Averaging across nominally identical device samples • Comparison with simulated pull-in voltages • Tabulation of results by device geometry Processed tables were manually verified and used directly to produce thesis figures. -------------------- Software- or Instrument-specific information Instrument: Keysight B1500A Semiconductor Parameter Analyzer (Keysight Technologies) Measurement type: DC I-V gate sweep Typical sweep: 0–45 V gate voltage (linear steps) Channels: 4 Source Measure Units (SMUs) Simulation software: COMSOL Multiphysics (finite-element modeling) Files can be opened using standard spreadsheet software (Excel, LibreOffice, MATLAB, Python). -------------------- Standards and calibration information The parameter analyser was internally calibrated according to manufacturer procedures prior to measurements. Current compliance limits were applied during measurement to prevent device damage. -------------------- Environmental/experimental conditions Measurements were conducted at laboratory ambient conditions (room temperature, atmospheric pressure). Devices were measured on probe stations using micro-manipulator probes. -------------------- Quality-assurance procedures • Multiple physical devices per design were measured to assess device-to-device variability and verify reproducibility. • Leakage current behavior was checked for consistency • Pull-in voltages were cross-compared with simulation • Anomalous sweeps were retained but annotated in filenames when observed -------------------- People involved Sample collection, measurement, analysis and submission: Marlon McCarthy (PhD candidate, University of Southampton) Supervision and oversight: Dr Yoshishige Tsuchiya Prof Jize Yan Dr Yul Koh Dr Sagnik Ghosh -------------------- DATA-SPECIFIC INFORMATION -------------------- Raw measurement CSV files Number of variables: typically 7–11 Number of cases/rows: typically 101 rows per device sweep Variable list Common variables include: Gate_Left_V — Gate voltage (V) Drain_V — Drain bias voltage (V) Source_V — Source voltage (V) Drain_I — Drain current (A) Source_I — Source current (A) Gate_leftI — Gate leakage current (A) gate_rightI — Secondary gate leakage current (A) Gate_Leakage — Derived leakage measurement (A) -------------------- Missing data codes: Blank fields indicate channels defined in the instrument template but not recorded for that measurement. Specialised formats or abbreviations used: • V = Volts • A = Amperes • µm = micrometres • D = device design number • S = physical device sample index -------------------- Date that the file was created: March 2026