An investigation into low-power micro/nano-electro-mechanical (M/NEM) switch devices for internet of things (IoT) power delivery applications using silicon structures and titanium nitride (TiN) contacts

Abstract

Internet of Things (IoT) devices are becoming increasingly common. As their applications expand, power consumption requirements also diverge. MEMS switches offer more efficient switching because their enhanced isolation reduces off-state current. This increased isolation is also beneficial for sensor switches, where the device functions as a sensor and permits current flow once the measurand reaches a specific threshold.

This work details the design, simulation, and testing of MEMS switches, along with the simulation of an inertial sensor switch fabricated on a novel platform developed by the Agency for Science, Technology and Research (A*STAR) in Singapore. The process can produce sub-micron contact gaps and uses Titanium Nitride (TiN) contacts.

The first run of fabricated switching devices was non-functional, but modifications to the designs resulted in some working devices. Further designs were submitted but not fabricated in time. Simulation results indicate that suitable actuation structures are achievable. Experimental results suggest that fabrication faults may be hindering successful device operation.

Sensor switch experimental data provided by A*STAR was used to model and estimate the contact gap and adhesive forces of TiN contacts. The simulation results show that the devices can be effectively modeled based on accurate estimation of the contact gap when compared to experimental results.

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Identifiers

ORCID for Marlon Elijah McCarthy: orcid.org/0000-0002-4462-5227

ORCID for Jize Yan: orcid.org/0000-0002-2886-2847

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