Nanoscale strain evolution and grain boundary-mediated defect sink behavior in irradiated SiC: insights from N-PED and DFT
Nanoscale strain evolution and grain boundary-mediated defect sink behavior in irradiated SiC: insights from N-PED and DFT
Understanding irradiation-induced strain in silicon carbide (SiC) is essential for designing radiation-tolerant ceramic materials. However, conventional methods often fail to resolve nanoscale strain gradients, especially in polycrystalline forms. In this study, we employ nano-beam precession electron diffraction (N-PED) to perform high-resolution, multi-directional strain mapping in both single-crystal 4H-SiC and polycrystalline α-SiC subjected to helium and hydrogen ion irradiation. The high-resolution X-ray diffraction (HR-XRD) simulations of He + H irradiated single-crystal 4H-SiC closely match the strain profiles obtained from N-PED, demonstrating the reliability and accuracy of the N-PED method. In He-irradiated polycrystalline α-SiC at high temperatures, a bubble-depleted zone (BDZ) near the grain boundary (GB) reveals that GBs act as active sinks for irradiation-induced defects. N-PED further shows strain amplification localized at the GBs, reaching up to ∼2.5 %, along with strain relief within the BDZ. To explain this behavior, density functional theory (DFT) calculations of binding and migration energies indicate a strong tendency for Si, C, and He atoms to segregate toward the GB core. This segregation reduces the availability of vacancies to accommodate He atoms and leads to local strain relaxation near the GB. Furthermore, first-principles tensile simulations reveal that Si and C interstitials mitigate He-induced GB embrittlement. Charge density and DOS analyses link this effect to the bonding characteristics between point defects and neighboring atoms at GB. These insights underscore the importance of grain boundary engineering in enhancing radiation tolerance of SiC for nuclear and space applications.
Bubble-denuded -zone, Grain boundaries, DFT, N-PED, SiC, nanoscale strain
Daghbouj, N.
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AlMotasem, A.T. AlMotasem
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Duchoň, J.
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Li, Bingsheng
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Bensalem, M.
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Bahadur, F.
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Munnik, Frans
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Ou, Xin
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Mackovà, Anna
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Weber, William J.
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Polcar, Tomas
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22 November 2025
Daghbouj, N.
11efccbe-eb37-4f69-a8c4-1fd21889503e
AlMotasem, A.T. AlMotasem
a00f4845-9de1-4a00-bdd0-ea23ed674da9
Duchoň, J.
9eea1ffe-9a0c-4f4c-ad52-9c51d376bd72
Li, Bingsheng
ea2e7a47-e7eb-45b5-80ac-62566a975e24
Bensalem, M.
ac1b2997-12fb-4837-99b3-ca74d3e21af8
Bahadur, F.
400709c3-d357-46fd-ab94-3754b7f9a272
Munnik, Frans
1d52017b-c02c-440c-98aa-f163d8f74490
Ou, Xin
c53c6342-162f-4862-98a8-50433db39860
Mackovà, Anna
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Weber, William J.
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Polcar, Tomas
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Daghbouj, N., AlMotasem, A.T. AlMotasem, Duchoň, J., Li, Bingsheng, Bensalem, M., Bahadur, F., Munnik, Frans, Ou, Xin, Mackovà, Anna, Weber, William J. and Polcar, Tomas
(2025)
Nanoscale strain evolution and grain boundary-mediated defect sink behavior in irradiated SiC: insights from N-PED and DFT.
Acta Materialia, 303, [121739].
(doi:10.1016/j.actamat.2025.121739).
Abstract
Understanding irradiation-induced strain in silicon carbide (SiC) is essential for designing radiation-tolerant ceramic materials. However, conventional methods often fail to resolve nanoscale strain gradients, especially in polycrystalline forms. In this study, we employ nano-beam precession electron diffraction (N-PED) to perform high-resolution, multi-directional strain mapping in both single-crystal 4H-SiC and polycrystalline α-SiC subjected to helium and hydrogen ion irradiation. The high-resolution X-ray diffraction (HR-XRD) simulations of He + H irradiated single-crystal 4H-SiC closely match the strain profiles obtained from N-PED, demonstrating the reliability and accuracy of the N-PED method. In He-irradiated polycrystalline α-SiC at high temperatures, a bubble-depleted zone (BDZ) near the grain boundary (GB) reveals that GBs act as active sinks for irradiation-induced defects. N-PED further shows strain amplification localized at the GBs, reaching up to ∼2.5 %, along with strain relief within the BDZ. To explain this behavior, density functional theory (DFT) calculations of binding and migration energies indicate a strong tendency for Si, C, and He atoms to segregate toward the GB core. This segregation reduces the availability of vacancies to accommodate He atoms and leads to local strain relaxation near the GB. Furthermore, first-principles tensile simulations reveal that Si and C interstitials mitigate He-induced GB embrittlement. Charge density and DOS analyses link this effect to the bonding characteristics between point defects and neighboring atoms at GB. These insights underscore the importance of grain boundary engineering in enhancing radiation tolerance of SiC for nuclear and space applications.
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Accepted/In Press date: 15 November 2025
e-pub ahead of print date: 16 November 2025
Published date: 22 November 2025
Keywords:
Bubble-denuded -zone, Grain boundaries, DFT, N-PED, SiC, nanoscale strain
Identifiers
Local EPrints ID: 511068
URI: http://eprints.soton.ac.uk/id/eprint/511068
ISSN: 1359-6454
PURE UUID: f0dbc284-ad92-4bf8-b52e-755b0ceb59de
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Date deposited: 30 Apr 2026 16:49
Last modified: 01 May 2026 01:49
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Contributors
Author:
N. Daghbouj
Author:
A.T. AlMotasem AlMotasem
Author:
J. Duchoň
Author:
Bingsheng Li
Author:
M. Bensalem
Author:
F. Bahadur
Author:
Frans Munnik
Author:
Xin Ou
Author:
Anna Mackovà
Author:
William J. Weber
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