Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiOx:Er
Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiOx:Er
Silicon-rich silica samples doped with erbium were grown by PECVD and characterized by photoluminescence, time-resolved photoluminescence and Fourier transform infrared spectroscopy. We observe that upon increased silicon content, the absorption spectrum reveals the formation of a SiN bond. This indicates the possible incorporation of nitrogen from the precursor NO gas into the Si nanoclusters. The highest erbium photoluminescence is obtained for the sample with the highest silicon content and its decay characteristics are nearly single exponential with a time constant of 5 ms. In addition to erbium emission, a visible luminescence peak at about 550 nm is observed. This shows multi-exponential decay kinetics with decay times of the order of 10 ns. We propose that this emission is due to small Si nanoclusters covered by a SiN shell. From the measurements, we study a mechanism to explain the erbium excitation in this material.
175-178
Wojdak, M.
b4d7a1f8-6bf7-4c5e-b793-7362e97e7727
Liaw, L.I.
daaae195-9bac-489d-b43f-85028a03dad9
Ahmad, I.
2b2d5b11-2eb0-4846-ba64-face6a2b9235
Oton, C.J.
cc559bbe-1b21-4aa7-81fc-63ba4a5a94c9
Loh, W.H.
ad865cd3-2580-4afa-8607-1c1d30cf8312
Kenyon, A.J.
e2e3bbbc-23b6-4c67-832d-9a16abf4aa31
15 January 2008
Wojdak, M.
b4d7a1f8-6bf7-4c5e-b793-7362e97e7727
Liaw, L.I.
daaae195-9bac-489d-b43f-85028a03dad9
Ahmad, I.
2b2d5b11-2eb0-4846-ba64-face6a2b9235
Oton, C.J.
cc559bbe-1b21-4aa7-81fc-63ba4a5a94c9
Loh, W.H.
ad865cd3-2580-4afa-8607-1c1d30cf8312
Kenyon, A.J.
e2e3bbbc-23b6-4c67-832d-9a16abf4aa31
Wojdak, M., Liaw, L.I., Ahmad, I., Oton, C.J., Loh, W.H. and Kenyon, A.J.
(2008)
Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiOx:Er.
Materials Science and Engineering: B, 146 (1-3), .
(doi:10.1016/j.mseb.2007.07.022).
Abstract
Silicon-rich silica samples doped with erbium were grown by PECVD and characterized by photoluminescence, time-resolved photoluminescence and Fourier transform infrared spectroscopy. We observe that upon increased silicon content, the absorption spectrum reveals the formation of a SiN bond. This indicates the possible incorporation of nitrogen from the precursor NO gas into the Si nanoclusters. The highest erbium photoluminescence is obtained for the sample with the highest silicon content and its decay characteristics are nearly single exponential with a time constant of 5 ms. In addition to erbium emission, a visible luminescence peak at about 550 nm is observed. This shows multi-exponential decay kinetics with decay times of the order of 10 ns. We propose that this emission is due to small Si nanoclusters covered by a SiN shell. From the measurements, we study a mechanism to explain the erbium excitation in this material.
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Published date: 15 January 2008
Additional Information:
from EMRS 2007, Symposium C, Rare Earth Ion Doping for Photonics: Materials, Mechanisms and Devices)
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Local EPrints ID: 52045
URI: http://eprints.soton.ac.uk/id/eprint/52045
ISSN: 0921-5107
PURE UUID: a36ddb9a-6c1d-42b0-92ac-0523eb9d3888
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Date deposited: 09 Jun 2008
Last modified: 15 Mar 2024 10:22
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Contributors
Author:
M. Wojdak
Author:
L.I. Liaw
Author:
I. Ahmad
Author:
C.J. Oton
Author:
W.H. Loh
Author:
A.J. Kenyon
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