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Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiOx:Er. (In: EMRS 2007, Symposium C, Rare Earth Ion Doping for Photonics: Materials, Mechanisms and Devices)

Record type: Article

Silicon-rich silica samples doped with erbium were grown by PECVD and characterized by photoluminescence, time-resolved photoluminescence and Fourier transform infrared spectroscopy. We observe that upon increased silicon content, the absorption spectrum reveals the formation of a SiN bond. This indicates the possible incorporation of nitrogen from the precursor NO gas into the Si nanoclusters. The highest erbium photoluminescence is obtained for the sample with the highest silicon content and its decay characteristics are nearly single exponential with a time constant of 5 ms. In addition to erbium emission, a visible luminescence peak at about 550 nm is observed. This shows multi-exponential decay kinetics with decay times of the order of 10 ns. We propose that this emission is due to small Si nanoclusters covered by a SiN shell. From the measurements, we study a mechanism to explain the erbium excitation in this material.

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Citation

Wojdak, M., Liaw, L.I., Ahmad, I., Oton, C.J., Loh, W.H. and Kenyon, A.J. (2008) Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiOx:Er. (In: EMRS 2007, Symposium C, Rare Earth Ion Doping for Photonics: Materials, Mechanisms and Devices) Materials Science and Engineering: B, 146, (1-3), pp. 175-178. (doi:10.1016/j.mseb.2007.07.022).

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Published date: 15 January 2008

Identifiers

Local EPrints ID: 52045
URI: http://eprints.soton.ac.uk/id/eprint/52045
ISSN: 0921-5107
PURE UUID: a36ddb9a-6c1d-42b0-92ac-0523eb9d3888

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Date deposited: 09 Jun 2008
Last modified: 17 Jul 2017 14:45

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Contributors

Author: M. Wojdak
Author: L.I. Liaw
Author: I. Ahmad
Author: C.J. Oton
Author: W.H. Loh
Author: A.J. Kenyon

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