Electrical phase change of Ga:La:S:Cu films

Simpson, R.E., Mairaj, A., Curry, R.J., Huang, C.C., Knight, K., Sessions, N.P., Hassan, M. and Hewak, D.W. (2007) Electrical phase change of Ga:La:S:Cu films Electronics Letters, 43, (15), pp. 830-831. (doi:10.1049/el:20071290).


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Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 µm in the amorphous state and 40 µm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150 ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1049/el:20071290
ISSNs: 0013-5194 (print)
Related URLs:
Keywords: Ga-La-S-Cu, amorphous state, amorphous thin films, crystallisation, electrical phase change, electrical resistivity, memory devices, optical pump probe method, sputter deposition
ePrint ID: 54044
Date :
Date Event
19 July 2007Published
Date Deposited: 04 Aug 2008
Last Modified: 16 Apr 2017 17:48
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/54044

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