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Electrical phase change of Ga:La:S:Cu films

Record type: Article

Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.%. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200 µm in the amorphous state and 40 µm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150 ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.

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Citation

Simpson, R.E., Mairaj, A., Curry, R.J., Huang, C.C., Knight, K., Sessions, N.P., Hassan, M. and Hewak, D.W. (2007) Electrical phase change of Ga:La:S:Cu films Electronics Letters, 43, (15), pp. 830-831. (doi:10.1049/el:20071290).

More information

Published date: 19 July 2007
Keywords: Ga-La-S-Cu, amorphous state, amorphous thin films, crystallisation, electrical phase change, electrical resistivity, memory devices, optical pump probe method, sputter deposition

Identifiers

Local EPrints ID: 54044
URI: http://eprints.soton.ac.uk/id/eprint/54044
ISSN: 0013-5194
PURE UUID: da58ca27-2399-48fa-90bf-2792c7e22872
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 04 Aug 2008
Last modified: 17 Jul 2017 14:36

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Contributors

Author: R.E. Simpson
Author: A. Mairaj
Author: R.J. Curry
Author: C.C. Huang ORCID iD
Author: K. Knight
Author: N.P. Sessions
Author: M. Hassan
Author: D.W. Hewak ORCID iD

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