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Thio- and seleno-ether complexes with Group 4 tetrahalides and tin tetrachloride: preparation and use in CVD for metal chalcogenide films

Thio- and seleno-ether complexes with Group 4 tetrahalides and tin tetrachloride: preparation and use in CVD for metal chalcogenide films
Thio- and seleno-ether complexes with Group 4 tetrahalides and tin tetrachloride: preparation and use in CVD for metal chalcogenide films
Reaction of TiCl4 or ZrI4 with the soft, neutral o-C6H4(CH2EMe)2 (E = S or Se) in anhydrous CH2Cl2 (or toluene) yields the distorted octahedral chelate complexes [MX4{o-C6H4(CH2EMe)2}]. Using Et2Se gives [MX4(Et2Se)2] (M = Zr, X = Cl or I; M = Hf, X = I). The Sn(IV) analogues, [SnCl4{o-C6H4(CH2EMe)2}] and [SnCl4(Et2Se)2] were obtained similarly. These complexes have been characterised spectroscopically and analytically, and crystal structures of trans-[SnCl4(Et2Se)2] and some selenonium salts derived as minor by-products from the parent Group 4 complexes are described. The neutral chalcogenoether complexes have been evaluated as single source precursors to ME2/ME thin films via LPCVD. [TiCl4{o-C6H4(CH2EMe)2}] leads to the deposition of air and moisture stable TiE2 films (with no residual Cl). Coverage of the substrate is uniform with platelet growth perpendicular to the surface. The heavier Zr(IV) species do not lead to significant ZrE2 deposition. On the other hand, LPCVD of [SnCl4{o-C6H4(CH2SMe)2}] leads to deposition of SnS2 at lower temperatures and SnS at higher temperatures, while [SnCl4{o-C6H4(CH2SeMe)2}] gives rather uneven coatings of SnSe2. The Et2Se derivative, [SnCl4(Et2Se)2] leads to uniform deposition of SnSe2 with growth perpendicular to the substrate surface. The SnE2/SnE films are stable indefinitely to air and moisture. The generation of TiS2, SnS2 and SnS in this way are very rare examples of metal sulfide deposition from C–S bond fission within a thioether complex.
tin(iv) halides, molecular precursors, glass, crystal-structures, ligands, chemical-vapor-deposition, titanium disulfide films, thioether, chemistry, magnetic-resonance
1477-9226
4769-4777
Reid, Stuart D.
50ffded0-cd9e-4565-b663-7fb5c5a7da45
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Waller, Benjamin J.
7f3ef004-71be-428d-abb0-6059879cdc29
Webster, Michael
f26c6e36-cb2e-486e-b2ed-b0d25a3a71f7
Reid, Stuart D.
50ffded0-cd9e-4565-b663-7fb5c5a7da45
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Waller, Benjamin J.
7f3ef004-71be-428d-abb0-6059879cdc29
Webster, Michael
f26c6e36-cb2e-486e-b2ed-b0d25a3a71f7

Reid, Stuart D., Hector, Andrew L., Levason, William, Reid, Gillian, Waller, Benjamin J. and Webster, Michael (2007) Thio- and seleno-ether complexes with Group 4 tetrahalides and tin tetrachloride: preparation and use in CVD for metal chalcogenide films. Dalton Transactions, (42), 4769-4777. (doi:10.1039/b708809d).

Record type: Article

Abstract

Reaction of TiCl4 or ZrI4 with the soft, neutral o-C6H4(CH2EMe)2 (E = S or Se) in anhydrous CH2Cl2 (or toluene) yields the distorted octahedral chelate complexes [MX4{o-C6H4(CH2EMe)2}]. Using Et2Se gives [MX4(Et2Se)2] (M = Zr, X = Cl or I; M = Hf, X = I). The Sn(IV) analogues, [SnCl4{o-C6H4(CH2EMe)2}] and [SnCl4(Et2Se)2] were obtained similarly. These complexes have been characterised spectroscopically and analytically, and crystal structures of trans-[SnCl4(Et2Se)2] and some selenonium salts derived as minor by-products from the parent Group 4 complexes are described. The neutral chalcogenoether complexes have been evaluated as single source precursors to ME2/ME thin films via LPCVD. [TiCl4{o-C6H4(CH2EMe)2}] leads to the deposition of air and moisture stable TiE2 films (with no residual Cl). Coverage of the substrate is uniform with platelet growth perpendicular to the surface. The heavier Zr(IV) species do not lead to significant ZrE2 deposition. On the other hand, LPCVD of [SnCl4{o-C6H4(CH2SMe)2}] leads to deposition of SnS2 at lower temperatures and SnS at higher temperatures, while [SnCl4{o-C6H4(CH2SeMe)2}] gives rather uneven coatings of SnSe2. The Et2Se derivative, [SnCl4(Et2Se)2] leads to uniform deposition of SnSe2 with growth perpendicular to the substrate surface. The SnE2/SnE films are stable indefinitely to air and moisture. The generation of TiS2, SnS2 and SnS in this way are very rare examples of metal sulfide deposition from C–S bond fission within a thioether complex.

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More information

Published date: 2007
Keywords: tin(iv) halides, molecular precursors, glass, crystal-structures, ligands, chemical-vapor-deposition, titanium disulfide films, thioether, chemistry, magnetic-resonance

Identifiers

Local EPrints ID: 54374
URI: http://eprints.soton.ac.uk/id/eprint/54374
ISSN: 1477-9226
PURE UUID: 9e58e5fa-baa0-4422-b11a-755a205b30b8
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for William Levason: ORCID iD orcid.org/0000-0003-3540-0971
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 31 Jul 2008
Last modified: 16 Mar 2024 02:53

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Contributors

Author: Stuart D. Reid
Author: William Levason ORCID iD
Author: Gillian Reid ORCID iD
Author: Benjamin J. Waller
Author: Michael Webster

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