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Direct electrodeposition of PbTe thin films on n-type silicon

Direct electrodeposition of PbTe thin films on n-type silicon
Direct electrodeposition of PbTe thin films on n-type silicon
High quality lead telluride thin films were directly deposited onto n-type silicon (1 0 0) substrates by electrodeposition at room temperature. The deposition mechanism was studied using cyclic voltammetry. The films were characterized by scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, and Fourier transform infrared spectroscopy. The results indicated that the deposited PbTe films exhibited a polycrystalline rock salt structure and good optical properties with a direct band gap of 0.31 eV.
pbs, growth, mechanisms, deposition, photodetectors, pbte, n-type si (100) wafer, electrodeposition, thin film, n-si(100), lead-chalcogenide, cdte, infrared-sensor arrays, semiconductors
1388-2481
363-366
Li, Xiaohong
9c4a40b0-c567-476b-b698-ae51b3f13dbd
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Li, Xiaohong
9c4a40b0-c567-476b-b698-ae51b3f13dbd
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04

Li, Xiaohong and Nandhakumar, Iris S. (2008) Direct electrodeposition of PbTe thin films on n-type silicon. Electrochemistry Communications, 10 (3), 363-366. (doi:10.1016/j.elecom.2007.12.036).

Record type: Article

Abstract

High quality lead telluride thin films were directly deposited onto n-type silicon (1 0 0) substrates by electrodeposition at room temperature. The deposition mechanism was studied using cyclic voltammetry. The films were characterized by scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, and Fourier transform infrared spectroscopy. The results indicated that the deposited PbTe films exhibited a polycrystalline rock salt structure and good optical properties with a direct band gap of 0.31 eV.

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More information

Published date: March 2008
Keywords: pbs, growth, mechanisms, deposition, photodetectors, pbte, n-type si (100) wafer, electrodeposition, thin film, n-si(100), lead-chalcogenide, cdte, infrared-sensor arrays, semiconductors

Identifiers

Local EPrints ID: 54474
URI: http://eprints.soton.ac.uk/id/eprint/54474
ISSN: 1388-2481
PURE UUID: 9220fbf5-a3e7-4d35-909f-b3d8be2cdaee
ORCID for Iris S. Nandhakumar: ORCID iD orcid.org/0000-0002-9668-9126

Catalogue record

Date deposited: 06 Aug 2008
Last modified: 03 Dec 2019 01:57

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Contributors

Author: Xiaohong Li

University divisions

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