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Reduction in crystallization time of Sb:Te films through addition of Bi

Reduction in crystallization time of Sb:Te films through addition of Bi
Reduction in crystallization time of Sb:Te films through addition of Bi
The electrical, optical, and phase change properties of bismuth doped Sb8Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8Te2 materials show potential as the active material in phase change data storage media.
alloys
0003-6951
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Fons, P.
b41bfcb8-e6a6-4f13-85d3-03449a315cb1
Tominaga, J.
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Guerin, S.
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Hayden, B.E.
aea74f68-2264-4487-9d84-5b12ddbbb331
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Fons, P.
b41bfcb8-e6a6-4f13-85d3-03449a315cb1
Tominaga, J.
5d5b4270-46f3-4639-a13e-91d25fecd35b
Guerin, S.
e185e0c2-85c6-4d1c-a2cf-cd2f410d346f
Hayden, B.E.
aea74f68-2264-4487-9d84-5b12ddbbb331

Simpson, R.E., Hewak, D.W., Fons, P., Tominaga, J., Guerin, S. and Hayden, B.E. (2008) Reduction in crystallization time of Sb:Te films through addition of Bi. Applied Physics Letters, 92 (14). (doi:10.1063/1.2901161).

Record type: Article

Abstract

The electrical, optical, and phase change properties of bismuth doped Sb8Te2 films have been characterized. Thin films of the material, with up to 15 at. % percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13 at. %. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2 eV. Bismuth doped Sb8Te2 materials show potential as the active material in phase change data storage media.

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Published date: April 2008
Keywords: alloys
Organisations: Chemistry, Optoelectronics Research Centre
Learn more about Optoelectronics Research Centre research Learn more about Chemistry research

Identifiers

Local EPrints ID: 54503
URI: http://eprints.soton.ac.uk/id/eprint/54503
DOI: doi:10.1063/1.2901161
ISSN: 0003-6951
PURE UUID: 29d78878-02c2-40a7-a8f6-62a5aa54b2d6
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for B.E. Hayden: ORCID iD orcid.org/0000-0002-7762-1812

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Date deposited: 06 Aug 2008
Last modified: 16 Mar 2024 02:36

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Contributors

Author: R.E. Simpson
Author: D.W. Hewak ORCID iD
Author: P. Fons
Author: J. Tominaga
Author: S. Guerin
Author: B.E. Hayden ORCID iD

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