Diffusion of gallium in sapphire
Diffusion of gallium in sapphire
In this paper, the characteristics of the diffusion of gallium into sapphire are investigated by SIMS analysis, as a step towards the fabrication of optimized Ga:sapphire optical waveguides. The diffusion coefficient was obtained for temperatures between 1400°C and 1600°C, and the results confirm that sapphire substrates can be readily doped with gallium, to depths in the order of microns, at a temperature of 1600°C. The procedure yields samples with low surface roughness and no apparent unwanted surface features, and the dopant concentration can be selected over a wide range, as gallium has a high solid solubility in sapphire.
diffusion, Al2O3, Ga
2695-2698
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Sager, D.A.
605498e8-a964-4ce4-965b-e825ac37502c
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
2006
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Sager, D.A.
605498e8-a964-4ce4-965b-e825ac37502c
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S.
(2006)
Diffusion of gallium in sapphire.
Journal of the European Ceramic Society, 26 (13), .
(doi:10.1016/j.jeurceramsoc.2005.06.039).
Abstract
In this paper, the characteristics of the diffusion of gallium into sapphire are investigated by SIMS analysis, as a step towards the fabrication of optimized Ga:sapphire optical waveguides. The diffusion coefficient was obtained for temperatures between 1400°C and 1600°C, and the results confirm that sapphire substrates can be readily doped with gallium, to depths in the order of microns, at a temperature of 1600°C. The procedure yields samples with low surface roughness and no apparent unwanted surface features, and the dopant concentration can be selected over a wide range, as gallium has a high solid solubility in sapphire.
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Published date: 2006
Keywords:
diffusion, Al2O3, Ga
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Local EPrints ID: 56991
URI: http://eprints.soton.ac.uk/id/eprint/56991
ISSN: 0955-2219
PURE UUID: 55e9d32e-d31e-43d0-a0f8-c5899a74a10d
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Date deposited: 13 Aug 2008
Last modified: 16 Mar 2024 03:56
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Author:
L.M.B. Hickey
Author:
D.A. Sager
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