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Diffusion of gallium in sapphire

Diffusion of gallium in sapphire
Diffusion of gallium in sapphire
In this paper, the characteristics of the diffusion of gallium into sapphire are investigated by SIMS analysis, as a step towards the fabrication of optimized Ga:sapphire optical waveguides. The diffusion coefficient was obtained for temperatures between 1400°C and 1600°C, and the results confirm that sapphire substrates can be readily doped with gallium, to depths in the order of microns, at a temperature of 1600°C. The procedure yields samples with low surface roughness and no apparent unwanted surface features, and the dopant concentration can be selected over a wide range, as gallium has a high solid solubility in sapphire.
diffusion, Al2O3, Ga
0955-2219
2695-2698
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Sager, D.A.
605498e8-a964-4ce4-965b-e825ac37502c
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca
Apostolopoulos, V.
8a898740-4c71-4040-a577-9b9d70530b4d
Hickey, L.M.B.
8879d8f5-f865-4099-8867-8ab9097ae74e
Sager, D.A.
605498e8-a964-4ce4-965b-e825ac37502c
Wilkinson, J.S.
73483cf3-d9f2-4688-9b09-1c84257884ca

Apostolopoulos, V., Hickey, L.M.B., Sager, D.A. and Wilkinson, J.S. (2006) Diffusion of gallium in sapphire. Journal of the European Ceramic Society, 26 (13), 2695-2698. (doi:10.1016/j.jeurceramsoc.2005.06.039).

Record type: Article

Abstract

In this paper, the characteristics of the diffusion of gallium into sapphire are investigated by SIMS analysis, as a step towards the fabrication of optimized Ga:sapphire optical waveguides. The diffusion coefficient was obtained for temperatures between 1400°C and 1600°C, and the results confirm that sapphire substrates can be readily doped with gallium, to depths in the order of microns, at a temperature of 1600°C. The procedure yields samples with low surface roughness and no apparent unwanted surface features, and the dopant concentration can be selected over a wide range, as gallium has a high solid solubility in sapphire.

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More information

Published date: 2006
Keywords: diffusion, Al2O3, Ga

Identifiers

Local EPrints ID: 56991
URI: http://eprints.soton.ac.uk/id/eprint/56991
ISSN: 0955-2219
PURE UUID: 55e9d32e-d31e-43d0-a0f8-c5899a74a10d
ORCID for V. Apostolopoulos: ORCID iD orcid.org/0000-0003-3733-2191
ORCID for J.S. Wilkinson: ORCID iD orcid.org/0000-0003-4712-1697

Catalogue record

Date deposited: 13 Aug 2008
Last modified: 20 Jul 2019 01:29

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