Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure


Feltin, E., Christmann, G., Dorsaz, J., Castiglia, A., Carlin, J.F., Butte, R., Grandjean, N., Christopoulos, S., Von Hogersthal,, G.B.H., Grundy, A.J.D., Lagoudakis, P.G. and Baumberg, J.J. (2007) Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure Electronics Letters, 43, (17), pp. 924-926. (doi:10.1049/el:20071226).

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Description/Abstract

Laser action with low threshold average pump power density (~50 W - cm-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10-10 is derived for this ready-to-be-processed laser structure.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1049/el:20071226
ISSNs: 0013-5194 (print)
Subjects:
ePrint ID: 57221
Date :
Date Event
16 August 2007Published
Date Deposited: 13 Aug 2008
Last Modified: 16 Apr 2017 17:39
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/57221

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