Feltin, E., Christmann, G., Dorsaz, J., Castiglia, A., Carlin, J.F., Butte, R., Grandjean, N., Christopoulos, S., Von Hogersthal,, G.B.H., Grundy, A.J.D., Lagoudakis, P.G. and Baumberg, J.J.
Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure
Electronics Letters, 43, (17), . (doi:10.1049/el:20071226).
Full text not available from this repository.
Laser action with low threshold average pump power density (~50 W - cm-2 ) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta ~ 2 x 10-10 is derived for this ready-to-be-processed laser structure.
Actions (login required)