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Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power
Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power
We report on femtosecond operation of a broadband diode-pumped external-cavity surface-emitting semiconductor laser, passively mode locked with a fast quantum–well Semiconductor Saturable Absorber Mirror grown at 735 °C. We obtained 477 fs pulses at 1.21 GHz. The average output power is 100 mW at 1040 nm, the pulse peak power 152 W, with ~1 W of 830 nm pump. The rf spectrum shows a linewidth <50 kHz at the noise level (–65 dB). We believe that the group-delay dispersion is compensated by the negative self-phase modulation in the absorber structure, leading to soliton-like mode locking. This system requires no additional technological step after the growth of the structures.
0003-6951
3892-3894
Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Sagnes, I.
2c96ab5e-82b6-4f52-9f1a-1c71f4bd798e
Saint-Girons, G.
8380b297-31c5-4ec9-832c-d6b725da172e
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16
Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Sagnes, I.
2c96ab5e-82b6-4f52-9f1a-1c71f4bd798e
Saint-Girons, G.
8380b297-31c5-4ec9-832c-d6b725da172e
Roberts, J.S.
c4eae59e-8356-4436-b317-670038103d16

Garnache, A., Hoogland, S., Tropper, A.C., Sagnes, I., Saint-Girons, G. and Roberts, J.S. (2002) Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power. Applied Physics Letters, 80 (21), 3892-3894. (doi:10.1063/1.1482143).

Record type: Article

Abstract

We report on femtosecond operation of a broadband diode-pumped external-cavity surface-emitting semiconductor laser, passively mode locked with a fast quantum–well Semiconductor Saturable Absorber Mirror grown at 735 °C. We obtained 477 fs pulses at 1.21 GHz. The average output power is 100 mW at 1040 nm, the pulse peak power 152 W, with ~1 W of 830 nm pump. The rf spectrum shows a linewidth <50 kHz at the noise level (–65 dB). We believe that the group-delay dispersion is compensated by the negative self-phase modulation in the absorber structure, leading to soliton-like mode locking. This system requires no additional technological step after the growth of the structures.

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Published date: 27 May 2002

Identifiers

Local EPrints ID: 57269
URI: https://eprints.soton.ac.uk/id/eprint/57269
ISSN: 0003-6951
PURE UUID: c7318f53-833e-4c64-9c4b-01243e1b62c6

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Date deposited: 07 Aug 2008
Last modified: 13 Mar 2019 20:34

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