High temperature gate control of quantum well spin memory
High temperature gate control of quantum well spin memory
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
246601-[4pp]
Karimov, O.Z.
e5137e05-4b16-484e-aae8-952a6fd69da4
John, G.H.
74030a46-249b-425c-9c15-cf9eeff3a519
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Lau, W.H.
342c0ce1-77e9-4d8f-8ae1-8f748e8b5095
Flatte, M.E.
b673ba02-15e1-4f4e-a9f3-e6c4427efe6c
Henini, M.
dffaac17-caab-4a18-9eb6-c858d8bb1ed2
Airey, R.
27147152-4122-4a3e-8f7b-2c15a095bc4b
2003
Karimov, O.Z.
e5137e05-4b16-484e-aae8-952a6fd69da4
John, G.H.
74030a46-249b-425c-9c15-cf9eeff3a519
Harley, R.T.
54613031-f60f-45f4-9b20-e49bcfd53b77
Lau, W.H.
342c0ce1-77e9-4d8f-8ae1-8f748e8b5095
Flatte, M.E.
b673ba02-15e1-4f4e-a9f3-e6c4427efe6c
Henini, M.
dffaac17-caab-4a18-9eb6-c858d8bb1ed2
Airey, R.
27147152-4122-4a3e-8f7b-2c15a095bc4b
Karimov, O.Z., John, G.H., Harley, R.T., Lau, W.H., Flatte, M.E., Henini, M. and Airey, R.
(2003)
High temperature gate control of quantum well spin memory.
Physical Review Letters, 91 (24), .
(doi:10.1103/PhysRevLett.91.246601).
Abstract
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a tenfold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of a voltage-gateable spin-memory time longer than 3 ns simultaneously with a high electron mobility.
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Published date: 2003
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Local EPrints ID: 57337
URI: http://eprints.soton.ac.uk/id/eprint/57337
ISSN: 0031-9007
PURE UUID: 62f9efc4-3b7d-4988-864a-07c7ce2a1ac0
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Date deposited: 14 Aug 2008
Last modified: 15 Mar 2024 11:06
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Author:
O.Z. Karimov
Author:
G.H. John
Author:
R.T. Harley
Author:
W.H. Lau
Author:
M.E. Flatte
Author:
M. Henini
Author:
R. Airey
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