Influence of high excitation on excitonic states in GaN/AlGaN quantum wells
Influence of high excitation on excitonic states in GaN/AlGaN quantum wells
0819448249
86-89
Society of Photo-Optical Instrumentation Engineers
Nelson, D.K.
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Jacobson, M.A.
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Grandjean, N.
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Massies, J.
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Bigenwald, P.
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Kavokin, A.
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2003
Nelson, D.K.
d3b5bc87-3c4b-42bc-9060-5656706a705d
Jacobson, M.A.
9400502d-56f0-498d-900f-c84f806a1f82
Grandjean, N.
625e8c89-a217-418c-a358-f53b123770ef
Massies, J.
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Bigenwald, P.
92c2e4b5-1fc5-42f0-bd5d-a08bd24061c6
Kavokin, A.
70ffda66-cfab-4365-b2db-c15e4fa1116b
Nelson, D.K., Jacobson, M.A., Grandjean, N., Massies, J., Bigenwald, P. and Kavokin, A.
(2003)
Influence of high excitation on excitonic states in GaN/AlGaN quantum wells.
In Proceedings of the 10th International Symposium on Nanostructures: Physics and Technology.
Society of Photo-Optical Instrumentation Engineers.
.
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Conference or Workshop Item
(Paper)
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More information
Published date: 2003
Venue - Dates:
10th International Symposium on Nanostructures: Physiscs and Technology, San Petersburg, Russia, 2002-06-17
Identifiers
Local EPrints ID: 57511
URI: http://eprints.soton.ac.uk/id/eprint/57511
ISBN: 0819448249
PURE UUID: a5501760-6e44-44d4-bfb5-761ec82fc12f
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Date deposited: 15 Aug 2008
Last modified: 20 Feb 2024 11:37
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Contributors
Author:
D.K. Nelson
Author:
M.A. Jacobson
Author:
N. Grandjean
Author:
J. Massies
Author:
P. Bigenwald
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