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Continuous-wave operation of monolithically grown 1.5-mu m optically pumped vertical-external-cavity surface-emitting lasers

Continuous-wave operation of monolithically grown 1.5-mu m optically pumped vertical-external-cavity surface-emitting lasers
Continuous-wave operation of monolithically grown 1.5-mu m optically pumped vertical-external-cavity surface-emitting lasers
Continuous-wave operation, to as high as 7 °C, of 1.5-?m optically pumped vertical-external-cavity surface-emitting lasers is reported. The epitaxial structure, monolithically grown on InP by metal-organic chemical vapor deposition, consists of an InAlAs/GaInAlAs Bragg reflector, an InGaAs/InGaAsP active region, and an InP capping layer. The threshold incident pump intensity is <9 kW/cm2.
0003-6935
6678-6681
Symonds, C.
8c9ce95c-8b29-4dac-81c2-bbd7bae43fca
Sagnes, I.
2c96ab5e-82b6-4f52-9f1a-1c71f4bd798e
Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Saint-Girons, G.
8380b297-31c5-4ec9-832c-d6b725da172e
Tropper, A. C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Oudar, J.L.
e06d42d0-76a5-4640-9339-838db89e80d3
Symonds, C.
8c9ce95c-8b29-4dac-81c2-bbd7bae43fca
Sagnes, I.
2c96ab5e-82b6-4f52-9f1a-1c71f4bd798e
Garnache, A.
401e722a-e0e9-4e7b-8150-a6b41371ebe4
Hoogland, S.
4cb41793-ad90-41f3-9944-bc8774fac5cb
Saint-Girons, G.
8380b297-31c5-4ec9-832c-d6b725da172e
Tropper, A. C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Oudar, J.L.
e06d42d0-76a5-4640-9339-838db89e80d3

Symonds, C., Sagnes, I., Garnache, A., Hoogland, S., Saint-Girons, G., Tropper, A. C. and Oudar, J.L. (2003) Continuous-wave operation of monolithically grown 1.5-mu m optically pumped vertical-external-cavity surface-emitting lasers. Applied Optics, 42 (33), 6678-6681. (doi:10.1364/AO.42.006678).

Record type: Article

Abstract

Continuous-wave operation, to as high as 7 °C, of 1.5-?m optically pumped vertical-external-cavity surface-emitting lasers is reported. The epitaxial structure, monolithically grown on InP by metal-organic chemical vapor deposition, consists of an InAlAs/GaInAlAs Bragg reflector, an InGaAs/InGaAsP active region, and an InP capping layer. The threshold incident pump intensity is <9 kW/cm2.

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Published date: 2003

Identifiers

Local EPrints ID: 57613
URI: http://eprints.soton.ac.uk/id/eprint/57613
ISSN: 0003-6935
PURE UUID: 5b00ac4b-3d7f-49e3-854d-e3c90acfbbf8

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Date deposited: 13 Aug 2008
Last modified: 15 Mar 2024 11:07

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Contributors

Author: C. Symonds
Author: I. Sagnes
Author: A. Garnache
Author: S. Hoogland
Author: G. Saint-Girons
Author: A. C. Tropper
Author: J.L. Oudar

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