All optical switching at Gallium/semiconductor interfaces
All optical switching at Gallium/semiconductor interfaces
We have observed for the first time that the interface between elemental gallium and semiconductors such as ZnSe or Si manifests optically induced reflectivity switching. This functionality is possible through controlling the coexistence of structural phases of Gallium with different optical properties in the nanoscale thick layer at the metal-semiconductor interface. A particular interest in Ga-semiconductor interfaces is driven by their technological importance for integrated photonic devices and the possibility to achieve high-contrast switching at certain wavelength ranges where the dielectric properties of the semiconductor match that of the interfacing gallium layer. Our results indicate that Ga films deposited directly on semiconductor elements could be useful in all-optical switching devices, optical limiters and as q-switching elements in low power fiber and semiconductors lasers.
Woodford, M.
89f6b04c-0b02-47e6-8f27-264fe74fb9fd
Stevens, G.C.
69d3fdbc-bb4c-4e7e-b066-2ec4f7f6986d
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
September 2004
Woodford, M.
89f6b04c-0b02-47e6-8f27-264fe74fb9fd
Stevens, G.C.
69d3fdbc-bb4c-4e7e-b066-2ec4f7f6986d
Zheludev, N.I.
32fb6af7-97e4-4d11-bca6-805745e40cc6
Woodford, M., Stevens, G.C. and Zheludev, N.I.
(2004)
All optical switching at Gallium/semiconductor interfaces.
Photon '04 / QEP-16, Glasgow, UK.
05 - 08 Sep 2004.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We have observed for the first time that the interface between elemental gallium and semiconductors such as ZnSe or Si manifests optically induced reflectivity switching. This functionality is possible through controlling the coexistence of structural phases of Gallium with different optical properties in the nanoscale thick layer at the metal-semiconductor interface. A particular interest in Ga-semiconductor interfaces is driven by their technological importance for integrated photonic devices and the possibility to achieve high-contrast switching at certain wavelength ranges where the dielectric properties of the semiconductor match that of the interfacing gallium layer. Our results indicate that Ga films deposited directly on semiconductor elements could be useful in all-optical switching devices, optical limiters and as q-switching elements in low power fiber and semiconductors lasers.
This record has no associated files available for download.
More information
Published date: September 2004
Venue - Dates:
Photon '04 / QEP-16, Glasgow, UK, 2004-09-05 - 2004-09-08
Identifiers
Local EPrints ID: 57762
URI: http://eprints.soton.ac.uk/id/eprint/57762
PURE UUID: 24310d75-3b04-4a05-84c2-ffa494e84495
Catalogue record
Date deposited: 11 Aug 2008
Last modified: 12 Dec 2021 02:45
Export record
Contributors
Author:
M. Woodford
Author:
G.C. Stevens
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
