Woodford, M., Stevens, G.C. and Zheludev, N.I.
All optical switching at Gallium/semiconductor interfaces
At Photon '04 / QEP-16.
06 - 09 Sep 2004.
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We have observed for the first time that the interface between elemental gallium and semiconductors such as ZnSe or Si manifests optically induced reflectivity switching. This functionality is possible through controlling the coexistence of structural phases of Gallium with different optical properties in the nanoscale thick layer at the metal-semiconductor interface. A particular interest in Ga-semiconductor interfaces is driven by their technological importance for integrated photonic devices and the possibility to achieve high-contrast switching at certain wavelength ranges where the dielectric properties of the semiconductor match that of the interfacing gallium layer. Our results indicate that Ga films deposited directly on semiconductor elements could be useful in all-optical switching devices, optical limiters and as q-switching elements in low power fiber and semiconductors lasers.
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