Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography
Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography
Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase change memory applications.
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Tai, Chao-Yi
5a9a315c-4db0-4809-984f-857a4210ebde
Liu, C.J.
694ab140-1894-43ec-919e-bcb9a0eef9b7
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
June 2008
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Tai, Chao-Yi
5a9a315c-4db0-4809-984f-857a4210ebde
Liu, C.J.
694ab140-1894-43ec-919e-bcb9a0eef9b7
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C., Tai, Chao-Yi, Liu, C.J., Simpson, R.E., Knight, K. and Hewak, D.W.
(2008)
Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography.
Nano Science and Technology Institute Conference (NSTI Nanotech 2008), Boston, USA.
01 - 05 Jun 2008.
4 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase change memory applications.
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Published date: June 2008
Venue - Dates:
Nano Science and Technology Institute Conference (NSTI Nanotech 2008), Boston, USA, 2008-06-01 - 2008-06-05
Identifiers
Local EPrints ID: 63372
URI: http://eprints.soton.ac.uk/id/eprint/63372
PURE UUID: f75ac967-ff5b-4c5e-be58-385647773651
Catalogue record
Date deposited: 17 Oct 2008
Last modified: 16 Mar 2024 03:46
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Contributors
Author:
Chao-Yi Tai
Author:
C.J. Liu
Author:
R.E. Simpson
Author:
K. Knight
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