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Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography

Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography
Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography
Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase change memory applications.
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Tai, Chao-Yi
5a9a315c-4db0-4809-984f-857a4210ebde
Liu, C.J.
694ab140-1894-43ec-919e-bcb9a0eef9b7
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Huang, C.C.
825f7447-6d02-48f6-b95a-fa33da71f106
Tai, Chao-Yi
5a9a315c-4db0-4809-984f-857a4210ebde
Liu, C.J.
694ab140-1894-43ec-919e-bcb9a0eef9b7
Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Knight, K.
8834be4f-7dce-43fe-bafd-959e5893bd51
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Huang, C.C., Tai, Chao-Yi, Liu, C.J., Simpson, R.E., Knight, K. and Hewak, D.W. (2008) Germanium antimony sulphide nano-wires fabricated by chemical vapour deposition and e-beam lithography. Nano Science and Technology Institute Conference (NSTI Nanotech 2008), Boston, USA. 31 May - 04 Jun 2008. 4 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

Germanium antimony sulphide (Ge-Sb-S) amorphous thin films have been deposited directly onto SiO-on-silicon substrates by means of chemical vapour deposition. The Ge-Sb-S films have been characterized by micro-Raman, scanning electron microscopy, energy dispersive X-ray analysis and static tester techniques. Ge-Sb-S nano wires have been patterned and fabricated by e-beam lithography and dry etching techniques. Modeling results show the potential for fast switching of these Ge-Sb-S nano wire structures, making it a possible candidate for the phase change memory applications.

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More information

Published date: June 2008
Venue - Dates: Nano Science and Technology Institute Conference (NSTI Nanotech 2008), Boston, USA, 2008-05-31 - 2008-06-04

Identifiers

Local EPrints ID: 63372
URI: http://eprints.soton.ac.uk/id/eprint/63372
PURE UUID: f75ac967-ff5b-4c5e-be58-385647773651
ORCID for C.C. Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 17 Oct 2008
Last modified: 24 Apr 2021 01:39

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