Wafer bonding with nanoprecision alignment for micro/nano systems
Wafer bonding with nanoprecision alignment for micro/nano systems
Exploiting mechanical principles of kinematic and elastic averaging, a novel passive approach has been developed to achieve nanoprecision bonding alignment. Alignment features comprising cantilever supported pyramids and V-pits have been designed and fabricated at silicon chip level. The engagement between the pyramids and pits and the compliance of the cantilevers result in the passive alignment. Infrared (IR) and scanning electron microscopy (SEM) inspections repeatedly confirmed the alignment accuracy of better than 200 nm at the bonding interface with good bonding quality. The applicability of the developed alignment technique and future works towards wafer level applications for advanced micro/nano systems are discussed.
1424408423
2103-2106
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Pandraud, G.
f9d14cad-3fe1-4e54-a397-87c218769501
French, P.J.
10c75469-53aa-449c-b8d6-9ef444b697b7
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Kraft, M.
54927621-738f-4d40-af56-a027f686b59f
10 June 2007
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Pandraud, G.
f9d14cad-3fe1-4e54-a397-87c218769501
French, P.J.
10c75469-53aa-449c-b8d6-9ef444b697b7
Spearing, S.M.
9e56a7b3-e0e8-47b1-a6b4-db676ed3c17a
Kraft, M.
54927621-738f-4d40-af56-a027f686b59f
Jiang, Liudi, Pandraud, G., French, P.J., Spearing, S.M. and Kraft, M.
(2007)
Wafer bonding with nanoprecision alignment for micro/nano systems.
Transducers & Eurosensors '07: 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, France.
10 - 14 Jun 2007.
.
(doi:10.1109/SENSOR.2007.4300580).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Exploiting mechanical principles of kinematic and elastic averaging, a novel passive approach has been developed to achieve nanoprecision bonding alignment. Alignment features comprising cantilever supported pyramids and V-pits have been designed and fabricated at silicon chip level. The engagement between the pyramids and pits and the compliance of the cantilevers result in the passive alignment. Infrared (IR) and scanning electron microscopy (SEM) inspections repeatedly confirmed the alignment accuracy of better than 200 nm at the bonding interface with good bonding quality. The applicability of the developed alignment technique and future works towards wafer level applications for advanced micro/nano systems are discussed.
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More information
Published date: 10 June 2007
Venue - Dates:
Transducers & Eurosensors '07: 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, France, 2007-06-10 - 2007-06-14
Organisations:
Engineering Mats & Surface Engineerg Gp, Engineering Science Unit
Identifiers
Local EPrints ID: 63547
URI: http://eprints.soton.ac.uk/id/eprint/63547
ISBN: 1424408423
PURE UUID: 00846327-0d34-4e7d-a15d-945ef2b5c981
Catalogue record
Date deposited: 20 Oct 2008
Last modified: 16 Mar 2024 03:47
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Contributors
Author:
G. Pandraud
Author:
P.J. French
Author:
M. Kraft
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