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A Review of silicon carbide development in MEMS applications

Jiang, Liudi and Cheung, R. (2009) A Review of silicon carbide development in MEMS applications International Journal of Nanomanufacturing, 2, (3/4), pp. 225-240.

Record type: Article

Abstract

Due to its desirable material properties, Silicon Carbide (SiC) has
become an alternative material to replace Si for Microelectromechanical
Systems (MEMS) applications in harsh environments. To promote SiC MEMS
development towards future cost-effective products, main technology areas in
material deposition and processes have attracted significant interest. The
developments in these areas have contributed to the rapid emergence of SiC
MEMS prototypes. In this paper, we give an overview of the important
developments in SiC material formation and fabrication processes in recent
years. Some of the most interesting state-of-the-art SiC MEMS devices are
reviewed. This highlights the major progresses in SiC MEMS developed thus
far. This paper also looks into the prospect of SiC MEMS drawing attention to
potential issues.

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More information

Published date: 2009
Additional Information: Invited review
Organisations: Engineering Mats & Surface Engineerg Gp

Identifiers

Local EPrints ID: 63549
URI: http://eprints.soton.ac.uk/id/eprint/63549
ISSN: 1746-9392
PURE UUID: 8c864077-1d22-47d7-be60-a28d47e622de
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 15 Oct 2008
Last modified: 17 Jul 2017 14:16

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Contributors

Author: Liudi Jiang ORCID iD
Author: R. Cheung

University divisions

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