A Review of silicon carbide development in MEMS applications

Jiang, Liudi and Cheung, R. (2009) A Review of silicon carbide development in MEMS applications International Journal of Nanomanufacturing, 2, (3/4), pp. 225-240.


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Due to its desirable material properties, Silicon Carbide (SiC) has
become an alternative material to replace Si for Microelectromechanical
Systems (MEMS) applications in harsh environments. To promote SiC MEMS
development towards future cost-effective products, main technology areas in
material deposition and processes have attracted significant interest. The
developments in these areas have contributed to the rapid emergence of SiC
MEMS prototypes. In this paper, we give an overview of the important
developments in SiC material formation and fabrication processes in recent
years. Some of the most interesting state-of-the-art SiC MEMS devices are
reviewed. This highlights the major progresses in SiC MEMS developed thus
far. This paper also looks into the prospect of SiC MEMS drawing attention to
potential issues.

Item Type: Article
Additional Information: Invited review
ISSNs: 1746-9392 (print)
Related URLs:
Organisations: Engineering Mats & Surface Engineerg Gp
ePrint ID: 63549
Date :
Date Event
Date Deposited: 15 Oct 2008
Last Modified: 16 Apr 2017 17:24
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/63549

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