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Reduction in crystallization time of Sb:Te films through addition of Bi

Reduction in crystallization time of Sb:Te films through addition of Bi
Reduction in crystallization time of Sb:Te films through addition of Bi
The electrical, optical and phase change properties of bismuth doped Sb8Te2 as-deposited and re-amorphised films have been characterised. Thin films of the material, with up to 15 atomic percent bismuth, have been synthesised by sputter deposition. As deposited amorphous films were stable at room temperature with a bismuth concentration upto 13 atomic percent. We show that effect of bismuth on the phase change properties of the films is to reduce the crystallization time by an order of magnitude. Both static and dynamic measurements of the as-deposited and reamorphised films have showed similar decreases of crystallisation time with bismuth increases. The crystallisation activation energy reduction appears unaffected by the bismuth atoms up to a concentration of 13 atomic percent. The structure of the films after annealing at 180ºC has been measured by X-ray diffraction; the material shows the same A7-type structure as that previously reported for the well known phase change film Ag3.4In3.7Sb76.4Te16.5. A reduction in the material viscosity with increasing bismuth is suggested as a means by which the reduction in crystallisation time is achieved while a negligible change in activation energy and structure is possible. The effect of bismuth dopants on the Sb8Te2 materialʼs physical properties and the consequent performance of optical media and electrical devices will be discussed.
phase change, antimony telluride, bismuth doping, crystallisation
Simpson, R.E.
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Fons, P.J.
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Kuwahara, M.
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Kolobov, A.
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Tominaga, J.
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Hewak, D.W.
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Guerin, S.
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Bayden, B.E.
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Simpson, R.E.
56e8b388-f479-49c7-bd14-de1ac014d40a
Fons, P.J.
894a1e90-0ce2-4a7e-8c5e-b0552b721980
Kuwahara, M.
4632baef-0fa0-4b64-8b21-aa10ecbd49fb
Kolobov, A.
dfcb4b38-771c-41b0-a85a-fe37dd08a73e
Tominaga, J.
5d5b4270-46f3-4639-a13e-91d25fecd35b
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Guerin, S.
e185e0c2-85c6-4d1c-a2cf-cd2f410d346f
Bayden, B.E.
9fc19cf7-fd06-477d-a2ec-9fce818c4e7f

Simpson, R.E., Fons, P.J., Kuwahara, M., Kolobov, A., Tominaga, J., Hewak, D.W., Guerin, S. and Bayden, B.E. (2008) Reduction in crystallization time of Sb:Te films through addition of Bi. European\Phase Change and Ovonics Symposium (E\PCOS 08), Prague, Czech Republic. 06 - 08 Sep 2008.

Record type: Conference or Workshop Item (Paper)

Abstract

The electrical, optical and phase change properties of bismuth doped Sb8Te2 as-deposited and re-amorphised films have been characterised. Thin films of the material, with up to 15 atomic percent bismuth, have been synthesised by sputter deposition. As deposited amorphous films were stable at room temperature with a bismuth concentration upto 13 atomic percent. We show that effect of bismuth on the phase change properties of the films is to reduce the crystallization time by an order of magnitude. Both static and dynamic measurements of the as-deposited and reamorphised films have showed similar decreases of crystallisation time with bismuth increases. The crystallisation activation energy reduction appears unaffected by the bismuth atoms up to a concentration of 13 atomic percent. The structure of the films after annealing at 180ºC has been measured by X-ray diffraction; the material shows the same A7-type structure as that previously reported for the well known phase change film Ag3.4In3.7Sb76.4Te16.5. A reduction in the material viscosity with increasing bismuth is suggested as a means by which the reduction in crystallisation time is achieved while a negligible change in activation energy and structure is possible. The effect of bismuth dopants on the Sb8Te2 materialʼs physical properties and the consequent performance of optical media and electrical devices will be discussed.

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More information

Published date: 2008
Venue - Dates: European\Phase Change and Ovonics Symposium (E\PCOS 08), Prague, Czech Republic, 2008-09-06 - 2008-09-08
Keywords: phase change, antimony telluride, bismuth doping, crystallisation

Identifiers

Local EPrints ID: 65476
URI: http://eprints.soton.ac.uk/id/eprint/65476
PURE UUID: e6458df8-ca88-4c73-9542-61d9b60e6758
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 17 Feb 2009
Last modified: 08 Jul 2021 01:35

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Contributors

Author: R.E. Simpson
Author: P.J. Fons
Author: M. Kuwahara
Author: A. Kolobov
Author: J. Tominaga
Author: D.W. Hewak ORCID iD
Author: S. Guerin
Author: B.E. Bayden

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