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Flexible semi-conductor devices in microstructured optical fibers for integrated optoelectronics

Flexible semi-conductor devices in microstructured optical fibers for integrated optoelectronics
Flexible semi-conductor devices in microstructured optical fibers for integrated optoelectronics
Here we present a novel group of flexible semiconductor electronic/optoelectronic devices made in microstructured optical fibers with extreme aspect ratios. These devices are motivated by incorporating the optoelectronic capabilities of semiconductor structures into optical fibers, the backbone for the modern optical communications. The joint of these two key techniques could enable all-fiber networks, in which light generation, modulation, transmission, and detection can all be performed within a fiber. One very important merit that makes optical fibers so practical in long distance communications is that they are very strong and flexible. The semiconductor materials and structures are thereby required to have comparable strengths and flexibilities, if constructed inside the fibers to realize unprecedented optoelectronics functions. Microstructured optical fibers have a complex two dimensional structure of air holes running down the length. We have demonstrated infiltration of a variety of semiconductor materials into the holes via the unique high pressure chemical vapor deposition. In this presentation, we first report the control of the carrier type and concentration in Si and Ge. Based on this control, we are able to make different types of field effect transistors and realize Si/Ge pn junctions in a fiber for the first time. This should be of considerable significance since pn junctions are the basic building blocks for optoelectronics. For example, our preliminary results show that Si/Ge heterojunctions work as in-fiber photodetectors for the 1.55 µm communication light. In the presentation, we will particularly address the flexibility of these in-fiber devices. These devices are wires or tubes with diameters ranging from 0.5 to 10 µm and lengths up to several tens of centimeters. Although being of polycrystalline nature, they show remarkable flexibilities, for example, they can generally stand > 1% strain without breaking. Generally, single crystalline whiskers and nanowires have proven to have strengths close to the theoretical values. The study of the mechanical behavior of these fine grained semiconductor materials should be highly worthwhile; they may expand the material choice for the flexible electronics and optoelectronics.
He, Rongrui
d89761c0-6ad3-460b-80a1-154d33763bdb
Krishnamurthi, Mahesh
f707c230-29e8-436d-a160-a54f41ae5305
Sazio, Pier
0d6200b5-9947-469a-8e97-9147da8a7158
Gopalan, Venkatraman
c37ec093-614a-4b1c-a6ec-a5b32f398a58
Badding, John
d1e2327a-54b9-44cd-9de7-812fb7bddd7a
He, Rongrui
d89761c0-6ad3-460b-80a1-154d33763bdb
Krishnamurthi, Mahesh
f707c230-29e8-436d-a160-a54f41ae5305
Sazio, Pier
0d6200b5-9947-469a-8e97-9147da8a7158
Gopalan, Venkatraman
c37ec093-614a-4b1c-a6ec-a5b32f398a58
Badding, John
d1e2327a-54b9-44cd-9de7-812fb7bddd7a

He, Rongrui, Krishnamurthi, Mahesh, Sazio, Pier, Gopalan, Venkatraman and Badding, John (2008) Flexible semi-conductor devices in microstructured optical fibers for integrated optoelectronics At 2008 Materials Research Society Fall Meeting. 01 - 05 Dec 2008.

Record type: Conference or Workshop Item (Paper)

Abstract

Here we present a novel group of flexible semiconductor electronic/optoelectronic devices made in microstructured optical fibers with extreme aspect ratios. These devices are motivated by incorporating the optoelectronic capabilities of semiconductor structures into optical fibers, the backbone for the modern optical communications. The joint of these two key techniques could enable all-fiber networks, in which light generation, modulation, transmission, and detection can all be performed within a fiber. One very important merit that makes optical fibers so practical in long distance communications is that they are very strong and flexible. The semiconductor materials and structures are thereby required to have comparable strengths and flexibilities, if constructed inside the fibers to realize unprecedented optoelectronics functions. Microstructured optical fibers have a complex two dimensional structure of air holes running down the length. We have demonstrated infiltration of a variety of semiconductor materials into the holes via the unique high pressure chemical vapor deposition. In this presentation, we first report the control of the carrier type and concentration in Si and Ge. Based on this control, we are able to make different types of field effect transistors and realize Si/Ge pn junctions in a fiber for the first time. This should be of considerable significance since pn junctions are the basic building blocks for optoelectronics. For example, our preliminary results show that Si/Ge heterojunctions work as in-fiber photodetectors for the 1.55 µm communication light. In the presentation, we will particularly address the flexibility of these in-fiber devices. These devices are wires or tubes with diameters ranging from 0.5 to 10 µm and lengths up to several tens of centimeters. Although being of polycrystalline nature, they show remarkable flexibilities, for example, they can generally stand > 1% strain without breaking. Generally, single crystalline whiskers and nanowires have proven to have strengths close to the theoretical values. The study of the mechanical behavior of these fine grained semiconductor materials should be highly worthwhile; they may expand the material choice for the flexible electronics and optoelectronics.

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More information

Published date: December 2008
Venue - Dates: 2008 Materials Research Society Fall Meeting, 2008-12-01 - 2008-12-05

Identifiers

Local EPrints ID: 65514
URI: http://eprints.soton.ac.uk/id/eprint/65514
PURE UUID: 1c5939af-a2b4-4402-a5ad-b111c0c0e807
ORCID for Pier Sazio: ORCID iD orcid.org/0000-0002-6506-9266

Catalogue record

Date deposited: 23 Feb 2009
Last modified: 19 Jul 2017 00:33

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Contributors

Author: Rongrui He
Author: Mahesh Krishnamurthi
Author: Pier Sazio ORCID iD
Author: Venkatraman Gopalan
Author: John Badding

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