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Ultra-high pressure MOCVD: a supercritical route to compound semiconductor materials

Wilson, James William, Yang, Jixin, Hyde, Jason R., Smith, David C., Howdle, Steven M., Mallik, Kanad, Sazio, Pier J.A., O'Brien, Paul, Malik, Mohamed, Afzaal, Mohammad and Nguyen, Chinh Q. (2008) Ultra-high pressure MOCVD: a supercritical route to compound semiconductor materials At 2008 Materials Research Society Fall Meeting. 01 - 05 Dec 2008.

Record type: Conference or Workshop Item (Paper)


The deposition of thin films of materials on to and in to preformed, high aspect ratio, template materials, is of significant interest to the semiconductor community. Damascene processes are vital to the electronic industries, and new synthetic methods are being developed in order to achieve modification of rationally designed templates; modifications that are limited by current MOCVD or CBD deposition technologies. Supercritical chemical fluid deposition, SCFD, offers a route to these devices by exploitation of their zero surface tension, tuneable physical properties, and ability to dissolve relatively high concentrations of reagents. In addition to Cu metalisations [1], Si-Ge core-shell wires and nanotubes[2] 3nm in diameter, can be produced by batch SCFD. However, this approach has yet to be extended to include compound-semiconductor deposition, i.e. II-VI materials.

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Published date: December 2008
Venue - Dates: 2008 Materials Research Society Fall Meeting, 2008-12-01 - 2008-12-05


Local EPrints ID: 65515
PURE UUID: c0574be4-9177-4a85-9272-db6f0f390b8d
ORCID for Pier J.A. Sazio: ORCID iD

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Date deposited: 23 Feb 2009
Last modified: 19 Jul 2017 00:33

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Author: James William Wilson
Author: Jixin Yang
Author: Jason R. Hyde
Author: David C. Smith
Author: Steven M. Howdle
Author: Kanad Mallik
Author: Pier J.A. Sazio ORCID iD
Author: Paul O'Brien
Author: Mohamed Malik
Author: Mohammad Afzaal
Author: Chinh Q. Nguyen

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