Ultra-high pressure MOCVD: a supercritical route to compound semiconductor materials


Wilson, James William, Yang, Jixin, Hyde, Jason R., Smith, David C., Howdle, Steven M., Mallik, Kanad, Sazio, Pier J.A., O'Brien, Paul, Malik, Mohamed, Afzaal, Mohammad and Nguyen, Chinh Q. (2008) Ultra-high pressure MOCVD: a supercritical route to compound semiconductor materials At 2008 Materials Research Society Fall Meeting. 01 - 05 Dec 2008.

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Description/Abstract

The deposition of thin films of materials on to and in to preformed, high aspect ratio, template materials, is of significant interest to the semiconductor community. Damascene processes are vital to the electronic industries, and new synthetic methods are being developed in order to achieve modification of rationally designed templates; modifications that are limited by current MOCVD or CBD deposition technologies. Supercritical chemical fluid deposition, SCFD, offers a route to these devices by exploitation of their zero surface tension, tuneable physical properties, and ability to dissolve relatively high concentrations of reagents. In addition to Cu metalisations [1], Si-Ge core-shell wires and nanotubes[2] 3nm in diameter, can be produced by batch SCFD. However, this approach has yet to be extended to include compound-semiconductor deposition, i.e. II-VI materials.

Item Type: Conference or Workshop Item (Paper)
Venue - Dates: 2008 Materials Research Society Fall Meeting, 2008-12-01 - 2008-12-05
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ePrint ID: 65515
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Date Event
December 2008Published
Date Deposited: 23 Feb 2009
Last Modified: 18 Apr 2017 21:57
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/65515

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