UV laser-induced domain inhibition: a route to domain-engineered structuring of lithium niobate
UV laser-induced domain inhibition: a route to domain-engineered structuring of lithium niobate
Continuous wave ultraviolet laser irradiation at λ = 244 - 305 nm of the +z face of congruent and MgO-doped lithium niobate is observed to inhibit ferroelectric domain inversion directly beneath the illuminated region during subsequent electric field poling. When followed by chemical etching, this effect results in creation of high-spatial-resolution domain-engineered microstructures.
Sones, C.L.
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Ying, Y.J.
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Mailis, S.
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Eason, R.W.
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Steigerwald, H.
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Jungk, T.
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Hoffmann, Á.
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Buse, K.
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Soergel, E.
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December 2008
Sones, C.L.
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Ying, Y.J.
1cc13d62-ee04-4ca3-b0b8-e60a523dc145
Mailis, S.
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Eason, R.W.
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Steigerwald, H.
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Jungk, T.
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Hoffmann, Á.
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Buse, K.
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Soergel, E.
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Sones, C.L., Ying, Y.J., Mailis, S., Eason, R.W., Steigerwald, H., Jungk, T., Hoffmann, Á., Buse, K. and Soergel, E.
(2008)
UV laser-induced domain inhibition: a route to domain-engineered structuring of lithium niobate.
Photonics 2008, , New Delhi, India.
13 - 17 Dec 2008.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Continuous wave ultraviolet laser irradiation at λ = 244 - 305 nm of the +z face of congruent and MgO-doped lithium niobate is observed to inhibit ferroelectric domain inversion directly beneath the illuminated region during subsequent electric field poling. When followed by chemical etching, this effect results in creation of high-spatial-resolution domain-engineered microstructures.
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Published date: December 2008
Venue - Dates:
Photonics 2008, , New Delhi, India, 2008-12-13 - 2008-12-17
Identifiers
Local EPrints ID: 65518
URI: http://eprints.soton.ac.uk/id/eprint/65518
PURE UUID: 4f605348-15d9-49c7-b829-fac80faf18bd
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Date deposited: 20 Feb 2009
Last modified: 14 Mar 2024 02:33
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Contributors
Author:
C.L. Sones
Author:
Y.J. Ying
Author:
S. Mailis
Author:
R.W. Eason
Author:
H. Steigerwald
Author:
T. Jungk
Author:
Á. Hoffmann
Author:
K. Buse
Author:
E. Soergel
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