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Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd3Ga5O12 and Ga2O3

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd3Ga5O12 and Ga2O3
Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd3Ga5O12 and Ga2O3
We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.
0947-8396
477-481
Darby, M.S.B.
c6ef0c2c-dd94-4e39-bae4-e785657048f0
May-Smith, T.C.
5f1ae4a3-6ae4-4e0f-9748-b26fd43a2811
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
Darby, M.S.B.
c6ef0c2c-dd94-4e39-bae4-e785657048f0
May-Smith, T.C.
5f1ae4a3-6ae4-4e0f-9748-b26fd43a2811
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020

Darby, M.S.B., May-Smith, T.C. and Eason, R.W. (2008) Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd3Ga5O12 and Ga2O3. Applied Physics A: Materials Science & Processing, 93 (2), 477-481. (doi:10.1007/s00339-008-4810-x).

Record type: Article

Abstract

We have demonstrated pulsed laser deposition of Nd-doped gadolinium gallium garnet on Y. Such an approach is of interest as a method of achieving stoichiometry control over films whilst the growth parameters are kept constant and optimal for high quality crystal growth. We show here how the stoichiometry and resultant lattice parameter of a film can be controlled by changing the relative deposition rates from the two targets. Films have been grown with enough extra Ga to compensate for the deficiency that commonly occurs when depositing only from a GGG target. We have also grown crystalline GGG films with an enriched Ga concentration, and this unconventional approach to film stoichiometry control may have potential applications in the fabrication of films with advanced compositionally graded structures.

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Published date: November 2008

Identifiers

Local EPrints ID: 65794
URI: http://eprints.soton.ac.uk/id/eprint/65794
ISSN: 0947-8396
PURE UUID: b4de9c01-6864-4a22-81eb-01ad6bb99d73
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 23 Mar 2009
Last modified: 25 Mar 2021 02:33

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Contributors

Author: M.S.B. Darby
Author: T.C. May-Smith
Author: R.W. Eason ORCID iD

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