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Silicon nanocluster-sensitized emission from erbium: the role of stress in the formation of silicon nanoclusters

Silicon nanocluster-sensitized emission from erbium: the role of stress in the formation of silicon nanoclusters
Silicon nanocluster-sensitized emission from erbium: the role of stress in the formation of silicon nanoclusters
Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.
0021-8979
123108-[5pp.]
Ahmad, I.
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Temple, M.P.
942d4f51-ca6a-4e78-96c4-bd4f142f7e10
Kallis, A.
6df259e2-1449-4c04-8014-c168af730e64
Wojdak, M.
b4d7a1f8-6bf7-4c5e-b793-7362e97e7727
Oton, C.J.
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Barbier, D.
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Saleh, H.
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Kenyon, A.J.
e2e3bbbc-23b6-4c67-832d-9a16abf4aa31
Loh, W.H.
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Ahmad, I.
2b2d5b11-2eb0-4846-ba64-face6a2b9235
Temple, M.P.
942d4f51-ca6a-4e78-96c4-bd4f142f7e10
Kallis, A.
6df259e2-1449-4c04-8014-c168af730e64
Wojdak, M.
b4d7a1f8-6bf7-4c5e-b793-7362e97e7727
Oton, C.J.
cc559bbe-1b21-4aa7-81fc-63ba4a5a94c9
Barbier, D.
fd2d4de2-39ee-48f1-ba91-21eafa106c49
Saleh, H.
2694b312-045f-41f4-922c-c410a957cebb
Kenyon, A.J.
e2e3bbbc-23b6-4c67-832d-9a16abf4aa31
Loh, W.H.
ad865cd3-2580-4afa-8607-1c1d30cf8312

Ahmad, I., Temple, M.P., Kallis, A., Wojdak, M., Oton, C.J., Barbier, D., Saleh, H., Kenyon, A.J. and Loh, W.H. (2008) Silicon nanocluster-sensitized emission from erbium: the role of stress in the formation of silicon nanoclusters. Journal of Applied Physics, 104 (12), 123108-[5pp.]. (doi:10.1063/1.3050324).

Record type: Article

Abstract

Erbium-doped silicon-rich silicon oxide films deposited by plasma enhanced chemical vapor deposition suffer from compressive stress as deposited, which converts to a large tensile stress on annealing due to the release of hydrogen. Although the cracking that results from this stress can be avoided by patterning the films into ridges, significant stress remains along the ridge axis. Measurements of erbium photoluminescence sensitized by silicon nanoclusters in stressed and relaxed films suggest an important role for internal film stresses in promoting the phase separation of excess silicon into nanoclusters, which has previously been thought of as a thermally driven process.

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Published date: 15 December 2008

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Local EPrints ID: 65820
URI: https://eprints.soton.ac.uk/id/eprint/65820
ISSN: 0021-8979
PURE UUID: 85eccc00-343c-4dc7-9fab-7a2fb42a276b

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Date deposited: 23 Mar 2009
Last modified: 19 Jul 2019 23:52

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