Preparation and properties of Mg(B1-xCx)2 using Carbon Chemical Vapor Coated Boron
Preparation and properties of Mg(B1-xCx)2 using Carbon Chemical Vapor Coated Boron
Promising initial results on bulk Mg(B1-xCx)2 prepared with carbon doped boron are presented. Carbon doping is achieved by reaction of ethylene gas on boron powder using a stainless steel tube furnace, a technique suitable for industrial scale processing. The nominal amount of doping was controlled by varying the reaction time with a fixed volume of ethylene gas, and the actual carbon uptake was determined by weight change after the reaction.The amount of carbon substitution x in the Mg(B-xCx)2 was found using the angular shift in the (100) x-ray reflection. Carbon substitution by the full nominal content in the C doped precursor boron was obtained for doping up to 7.2at%, as shown by a -axis compression consistent with that of carbon doped single crystals. The critical current density of the 4 at% C doped sample for temperatures at 20–30 K and fields up to 4 T, relevant to high temperature applications, was significantly higher than those in the published literature. The C of a 10wt% nano-SiC doped sample, used as a comparative benchmark, was found to be lower than the C doped sample at field below 2 T, but to reduce slower at higher fields. Structure analysis of the SiC doped sample revealed a coexistence of two C substitution levels of 2.25%at and 5.25%at.
MgB2, magnesium, diboride superconducting nano, carbon doping
2794-2797
Young, E.A.
d3a881b0-a564-41f5-9843-34ae86da360f
Yang, Y.
4cac858a-e0c0-4174-a839-05ca394fc51f
June 2007
Young, E.A.
d3a881b0-a564-41f5-9843-34ae86da360f
Yang, Y.
4cac858a-e0c0-4174-a839-05ca394fc51f
Young, E.A. and Yang, Y.
(2007)
Preparation and properties of Mg(B1-xCx)2 using Carbon Chemical Vapor Coated Boron.
IEEE Transactions on Applied Superconductivity, 17 (2 [3]), .
(doi:10.1109/TASC.2007.897986).
Abstract
Promising initial results on bulk Mg(B1-xCx)2 prepared with carbon doped boron are presented. Carbon doping is achieved by reaction of ethylene gas on boron powder using a stainless steel tube furnace, a technique suitable for industrial scale processing. The nominal amount of doping was controlled by varying the reaction time with a fixed volume of ethylene gas, and the actual carbon uptake was determined by weight change after the reaction.The amount of carbon substitution x in the Mg(B-xCx)2 was found using the angular shift in the (100) x-ray reflection. Carbon substitution by the full nominal content in the C doped precursor boron was obtained for doping up to 7.2at%, as shown by a -axis compression consistent with that of carbon doped single crystals. The critical current density of the 4 at% C doped sample for temperatures at 20–30 K and fields up to 4 T, relevant to high temperature applications, was significantly higher than those in the published literature. The C of a 10wt% nano-SiC doped sample, used as a comparative benchmark, was found to be lower than the C doped sample at field below 2 T, but to reduce slower at higher fields. Structure analysis of the SiC doped sample revealed a coexistence of two C substitution levels of 2.25%at and 5.25%at.
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YoungPaperMgB2-C.pdf
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Published date: June 2007
Keywords:
MgB2, magnesium, diboride superconducting nano, carbon doping
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Local EPrints ID: 66435
URI: http://eprints.soton.ac.uk/id/eprint/66435
ISSN: 1051-8223
PURE UUID: c36dede3-6563-469b-92ec-c5a046910d0f
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Date deposited: 16 Jun 2009
Last modified: 14 Mar 2024 02:37
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