High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography
High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography
High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type wBi(0.5)Sb(1.5)Te(3) films is investigated to find out the optimal conditions for the deposition of nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and nanotemplating Bi0.5Sb1.5Te3 nanowires. The obtained nanowires have average diameters of 80 nm and lengths of 20 mu m, which are equivalent to the pore size and thickness of Kapton foils. The nanowires exhibit a preferential orientation along the {110} plane with a composition of 11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the electrical resistance show the semiconducting nature of the nanowires with a negative temperature coefficient of resistance and band gap energy of 0.089 +/- 0.006 eV.
3584-3590
Li, Xiaohong
ea8135d4-1bd7-4771-85cd-eb8f2a264654
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Tudor, John
46eea408-2246-4aa0-8b44-86169ed601ff
Beeby, Steve P.
ba565001-2812-4300-89f1-fe5a437ecb0d
White, Neil M.
c7be4c26-e419-4e5c-9420-09fc02e2ac9c
2009
Li, Xiaohong
ea8135d4-1bd7-4771-85cd-eb8f2a264654
Koukharenko, Elena
b34ae878-2776-4088-8880-5b2bd4f33ec3
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Tudor, John
46eea408-2246-4aa0-8b44-86169ed601ff
Beeby, Steve P.
ba565001-2812-4300-89f1-fe5a437ecb0d
White, Neil M.
c7be4c26-e419-4e5c-9420-09fc02e2ac9c
Li, Xiaohong, Koukharenko, Elena, Nandhakumar, Iris S., Tudor, John, Beeby, Steve P. and White, Neil M.
(2009)
High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography.
Physical Chemistry Chemical Physics, 11 (18), .
(doi:10.1039/B818040G).
Abstract
High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type wBi(0.5)Sb(1.5)Te(3) films is investigated to find out the optimal conditions for the deposition of nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and nanotemplating Bi0.5Sb1.5Te3 nanowires. The obtained nanowires have average diameters of 80 nm and lengths of 20 mu m, which are equivalent to the pore size and thickness of Kapton foils. The nanowires exhibit a preferential orientation along the {110} plane with a composition of 11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the electrical resistance show the semiconducting nature of the nanowires with a negative temperature coefficient of resistance and band gap energy of 0.089 +/- 0.006 eV.
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Submitted date: 14 October 2008
Published date: 2009
Additional Information:
Imported from ISI Web of Science
Organisations:
Engineering Mats & Surface Engineerg Gp
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Local EPrints ID: 66545
URI: http://eprints.soton.ac.uk/id/eprint/66545
ISSN: 1463-9076
PURE UUID: 28cf7d94-4dba-47b5-b0a8-2fed55c691bf
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Date deposited: 29 Jun 2009
Last modified: 14 Mar 2024 02:41
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Author:
Xiaohong Li
Author:
Elena Koukharenko
Author:
John Tudor
Author:
Steve P. Beeby
Author:
Neil M. White
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