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Resistivity percolation of co-sputtered amorphous Si/Ti films

Resistivity percolation of co-sputtered amorphous Si/Ti films
Resistivity percolation of co-sputtered amorphous Si/Ti films
Amorphous silicon/titanium (a-Si/Ti) composite was deposited by co-sputtering techniques at room temperature with a view to explore its potential applications for monolithic integration of micro-electromechanical systems (MEMS) and integrated circuits. The electrical resistivity of the films was successfully controlled over a range of magnitudes and the electrical transport mechanism was studied, based on percolation conduction theory of a three dimensional random network. The stability of the nanostructures and thus the percolation threshold was also observed at annealing temperatures below 300 °C, while the percolation threshold decreased with annealing temperature above 300 °C. Surface morphology and dry etching feasibility of the composite are also discussed for the potential applications of using it as the structural device layer for MEMS.
amorphous Si/Ti, nanocomposites, electrical properties, percolation
0167-577X
215-217
Lewis, G.
61365ff8-ab4b-4204-98bb-69e8bba10fdc
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Lewis, G.
61365ff8-ab4b-4204-98bb-69e8bba10fdc
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1

Lewis, G., Moktadir, Zakaria, Kraft, Michael and Jiang, Liudi (2008) Resistivity percolation of co-sputtered amorphous Si/Ti films. Materials Letters, 63 (2), 215-217. (doi:10.1016/j.matlet.2008.09.061).

Record type: Article

Abstract

Amorphous silicon/titanium (a-Si/Ti) composite was deposited by co-sputtering techniques at room temperature with a view to explore its potential applications for monolithic integration of micro-electromechanical systems (MEMS) and integrated circuits. The electrical resistivity of the films was successfully controlled over a range of magnitudes and the electrical transport mechanism was studied, based on percolation conduction theory of a three dimensional random network. The stability of the nanostructures and thus the percolation threshold was also observed at annealing temperatures below 300 °C, while the percolation threshold decreased with annealing temperature above 300 °C. Surface morphology and dry etching feasibility of the composite are also discussed for the potential applications of using it as the structural device layer for MEMS.

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Published date: 2008
Keywords: amorphous Si/Ti, nanocomposites, electrical properties, percolation
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 68839
URI: https://eprints.soton.ac.uk/id/eprint/68839
ISSN: 0167-577X
PURE UUID: 3a93a46d-3748-4ddd-82c7-1753baa74535
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 06 Oct 2009
Last modified: 20 Jul 2019 00:55

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