Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser
Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser
We report the generation of subpicosecond pulses from a passively mode locked, optically pumped quantum well semiconductor disk laser using a quantum dot semiconductor saturable absorber mirror (SESAM). We obtained 870 fs pulses at a repetition rate of 895 MHz with average output power of 45 mW at 1027.5 nm. The mode locking operation was insensitive to SESAM temperature over the range of ?10 to 85 °C, with the pulse duration variation thought to be dominated by the temperature dependence of the group delay dispersion
gallium arsenide, high-speed optical techniques, III-V semiconductors, indium compounds, laser mirrors, laser mode locking, microdisc lasers, optical pumping, quantum well lasers
251105-[3pp]
Wilcox, Keith G.
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Butkus, Mantas
dc443d83-a5eb-41e3-a572-431a2b2efac7
Farrer, Ian
030154ac-5a34-490e-b99f-9f4b330b60e4
Ritchie, David A.
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Tropper, Anne
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Rafailov, Edik U.
a362b573-1941-4fe0-aa8a-21c05ce09842
22 June 2009
Wilcox, Keith G.
b7c8da76-3530-4cbf-aaec-ffa11c347230
Butkus, Mantas
dc443d83-a5eb-41e3-a572-431a2b2efac7
Farrer, Ian
030154ac-5a34-490e-b99f-9f4b330b60e4
Ritchie, David A.
dafb13bd-0736-4dd3-972f-0c73570a4278
Tropper, Anne
f3505426-e0d5-4e91-aed3-aecdb44b393c
Rafailov, Edik U.
a362b573-1941-4fe0-aa8a-21c05ce09842
Wilcox, Keith G., Butkus, Mantas, Farrer, Ian, Ritchie, David A., Tropper, Anne and Rafailov, Edik U.
(2009)
Subpicosecond quantum dot saturable absorber mode-locked semiconductor disk laser.
Applied Physics Letters, 94 (25), .
(doi:10.1063/1.3158960).
Abstract
We report the generation of subpicosecond pulses from a passively mode locked, optically pumped quantum well semiconductor disk laser using a quantum dot semiconductor saturable absorber mirror (SESAM). We obtained 870 fs pulses at a repetition rate of 895 MHz with average output power of 45 mW at 1027.5 nm. The mode locking operation was insensitive to SESAM temperature over the range of ?10 to 85 °C, with the pulse duration variation thought to be dominated by the temperature dependence of the group delay dispersion
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Published date: 22 June 2009
Keywords:
gallium arsenide, high-speed optical techniques, III-V semiconductors, indium compounds, laser mirrors, laser mode locking, microdisc lasers, optical pumping, quantum well lasers
Identifiers
Local EPrints ID: 69160
URI: http://eprints.soton.ac.uk/id/eprint/69160
ISSN: 0003-6951
PURE UUID: 2ce8da0e-9cb2-48c7-bea7-3ba84f8aa6f4
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Date deposited: 22 Oct 2009
Last modified: 13 Mar 2024 19:26
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Contributors
Author:
Keith G. Wilcox
Author:
Mantas Butkus
Author:
Ian Farrer
Author:
David A. Ritchie
Author:
Anne Tropper
Author:
Edik U. Rafailov
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